CS730FA9H MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

CS730FA9H datasheet

8.1. Size:1785K jilin sino
jcs730vc jcs730rc jcs730sc jcs730bc jcs730cc jcs730fc.pdf pdf_icon

N R N-CHANNEL MOSFET JCS730C MAIN CHARACTERISTICS Package ID 5.5 A VDSS 400 V Rdson-max 1.0 @Vgs=10V Qg-typ 14 nC APPLICATIONS High frequency switching mode power supply LED Electronic ballast LED power supply

8.2. Size:811K jilin sino
jcs730v jcs730r jcs730b jcs730s jcs730c jcs730f.pdf pdf_icon

N R N-CHANNEL MOSFET JCS730 MAIN CHARACTERISTICS Package ID 5.5 A VDSS 400 V 1.0 Rdson Vgs=10V Qg 31 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES

8.3. Size:190K crhj
cs730f a9rd.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS730F A9RD General Description VDSS 400 V ID 6 A CS730F A9RD, the silicon N-channel Enhanced PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.75 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

8.4. Size:222K crhj
cs730f a9h.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS730F A9H General Description VDSS 400 V ID 6 A CS730F A9H, the silicon N-channel Enhanced PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power