CS730FA9H PDF and Equivalents Search

 

CS730FA9H Specs and Replacement

Type Designator: CS730FA9H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 67 nS

Cossⓘ - Output Capacitance: 72 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO220F

CS730FA9H substitution

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CS730FA9H datasheet

 8.1. Size:1785K  jilin sino
jcs730vc jcs730rc jcs730sc jcs730bc jcs730cc jcs730fc.pdf pdf_icon

CS730FA9H

N R N-CHANNEL MOSFET JCS730C MAIN CHARACTERISTICS Package ID 5.5 A VDSS 400 V Rdson-max 1.0 @Vgs=10V Qg-typ 14 nC APPLICATIONS High frequency switching mode power supply LED Electronic ballast LED power supply ... See More ⇒

 8.2. Size:811K  jilin sino
jcs730v jcs730r jcs730b jcs730s jcs730c jcs730f.pdf pdf_icon

CS730FA9H

N R N-CHANNEL MOSFET JCS730 MAIN CHARACTERISTICS Package ID 5.5 A VDSS 400 V 1.0 Rdson Vgs=10V Qg 31 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES... See More ⇒

 8.3. Size:190K  crhj
cs730f a9rd.pdf pdf_icon

CS730FA9H

Silicon N-Channel Power MOSFET R CS730F A9RD General Description VDSS 400 V ID 6 A CS730F A9RD, the silicon N-channel Enhanced PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.75 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

 8.4. Size:222K  crhj
cs730f a9h.pdf pdf_icon

CS730FA9H

Silicon N-Channel Power MOSFET R CS730F A9H General Description VDSS 400 V ID 6 A CS730F A9H, the silicon N-channel Enhanced PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

Detailed specifications: SI9945DY, CS6N90A8H, NCE2305A, NCE3007S, MTD6P10ET4, MMSF7P03HDR2G, CS730A8H, SPN3400S23RG, 18N50, CS730FA9RD, CS740A0H, CS120N08A8, SSC8033GS6, SSC8035GS6, CS7N60A3R, CS7N60A4R, NCE0108AS

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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