CS120N08A8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS120N08A8
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 208 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 65.6 nS
Cossⓘ - Capacitancia de salida: 494.4 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
Paquete / Cubierta: TO220AB
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CS120N08A8 Datasheet (PDF)
cs120n08a8.pdf
Silicon N-Channel Power MOSFET R CS120N08 A8 General Description VDSS 85 V CS120N08 A8, the silicon N-channel Enhanced ID Silicon limited current 120 A PD(TC=25) 208 W VDMOSFETs, is obtained by advanced Trench Technology RDS(ON)Typ 6 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor ca
brcs120n03ya.pdf
BRCS120N03YA Rev.A May.-2022 DATA SHEET / Descriptions PDFN33-8L N MOS DoubleN-CHANNELMOSFETinaPDFN33-8LPlasticPackage. / Features VDS (V) = 30V ID =24A (VGS =20V) RDS(ON)@10V13mR(Typ.11mR) HFProduct. / Applications Intendedforuseing
brcs120n02zj.pdf
BRCS120N02ZJ Rev.A Aug.-2020 DATA SHEET / Descriptions DFN 2*2B-6L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / Features VDS (V) = 20V ID = 8 A (VGS = 20V) HF Product. / Applications DC/DC
brcs120n03zj.pdf
BRCS120N03ZJRev.B Sep.-2020 DATA SHEET / DescriptionsDFN 2*2B-6L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / FeaturesV (V) = 30VDSI = 8 A (V = 20V)D GSHF Product. / ApplicationsDC/DC
brcs120n03zb.pdf
BRCS120N03ZB Rev.C Mar.-2022 DATA SHEET / Descriptions DFN 33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 33A-8L Plastic Package. / Features VDS (V) = 30V ID = 20 A (VGS =20V) RDS(ON)@10V13mR(Typ.11mR) HF Product. / Applications
brcs120n06ha.pdf
BRCS120N06HA Rev.A Nov.-2018 DATA SHEET / Descriptions TO-247 N N-CHANNEL MOSFET in a TO-247Plastic Package. / Features Low gate charge minimize switching loss and fast recovery body diode.HF Product. / Applications DC/DC
brcs120n02lzj.pdf
BRCS120N02LZJ Rev.C Nov.-2021 DATA SHEET / Descriptions DFN22B-6L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN22B-6LPlastic Package. / Features VDS (V) =20V ID = 8 A (VGS =12V) HF Product. / Applications DC/DC
brcs120n03dp.pdf
BRCS120N03DP Rev.A Dec.-2022 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features V (V) = 30V DSI =42A (V = 20V) D GS RDS(ON)@10V12.5mR(Typ.11.7mR) HF Product. / Applications DC/DC These devices are well su
brcs120n03yb.pdf
BRCS120N03YB Rev.A Mar.-2022 DATA SHEET / Descriptions PDFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 30V ID =20 A (VGS = 20V) RDS(ON)@10V13mR(Typ.11mR) HFProduct. / Applications DC/DC
brcs120n06yb.pdf
BRCS120N06YB Rev.A Feb.-2022 DATA SHEET / Descriptions PDFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 60V ID =24 A (VGS = 20V) RDS(ON)@10V13mR(Typ.11.5mR) HFProduct. / Applications DC/DC
brcs120n06sra.pdf
BRCS120N06SRA Rev.A Apr.-2023 DATA SHEET / Descriptions N TO-220 N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching,HF Product. DS(on) rss / Applications
brcs120n06sym.pdf
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Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: AP9971GJ-HF | RD3L140SP
History: AP9971GJ-HF | RD3L140SP
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