CS120N08A8 Specs and Replacement
Type Designator: CS120N08A8
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65.6 nS
Cossⓘ - Output Capacitance: 494.4 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO220AB
CS120N08A8 substitution
- MOSFET ⓘ Cross-Reference Search
CS120N08A8 datasheet
cs120n08a8.pdf
Silicon N-Channel Power MOSFET R CS120N08 A8 General Description VDSS 85 V CS120N08 A8, the silicon N-channel Enhanced ID Silicon limited current 120 A PD(TC=25 ) 208 W VDMOSFETs, is obtained by advanced Trench Technology RDS(ON)Typ 6 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor ca... See More ⇒
brcs120n03ya.pdf
BRCS120N03YA Rev.A May.-2022 DATA SHEET / Descriptions PDFN3 3-8L N MOS Double N-CHANNEL MOSFET in a PDFN3 3-8L Plastic Package. / Features VDS (V) = 30V ID =24A (VGS = 20V) RDS(ON)@10V 13mR(Typ.11mR) HF Product. / Applications Intended for use in g... See More ⇒
brcs120n02zj.pdf
BRCS120N02ZJ Rev.A Aug.-2020 DATA SHEET / Descriptions DFN 2*2B-6L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / Features VDS (V) = 20V ID = 8 A (VGS = 20V) HF Product. / Applications DC/DC ... See More ⇒
Detailed specifications: NCE3007S, MTD6P10ET4, MMSF7P03HDR2G, CS730A8H, SPN3400S23RG, CS730FA9H, CS730FA9RD, CS740A0H, IRF2807, SSC8033GS6, SSC8035GS6, CS7N60A3R, CS7N60A4R, NCE0108AS, NTF5P03T3G, NTGS3443T1G, NTGS4111PT
Keywords - CS120N08A8 MOSFET specs
CS120N08A8 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: 2SK1403A | WML07N80M3
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