NTGS4111PT Todos los transistores

 

NTGS4111PT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTGS4111PT
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: TSOP6
 

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NTGS4111PT Datasheet (PDF)

 ..1. Size:858K  cn vbsemi
 ntgs4111pt.pdf pdf_icon

NTGS4111PT

NTGS4111PTwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-

 0.1. Size:134K  onsemi
 ntgs4111pt1.pdf pdf_icon

NTGS4111PT

NTGS4111PPower MOSFET-30 V, -4.7 A, Single P-Channel, TSOP-6Features Leading -30 V Trench Process for Low RDS(on)http://onsemi.com Low Profile Package Suitable for Portable Applications Surface Mount TSOP-6 Package Saves Board SpaceV(BR)DSS RDS(on) TYP ID MAX Improved Efficiency for Battery Applications38 mW @ -10 V Pb-Free Package is Available-30 V -4.7 A

 5.1. Size:203K  onsemi
 ntgs4111p nvgs4111p.pdf pdf_icon

NTGS4111PT

NTGS4111P, NVGS4111PMOSFET Power, Single,P-Channel, TSOP-6-30 V, -4.7 AFeatureshttp://onsemi.com Leading -30 V Trench Process for Low RDS(on) Low Profile Package Suitable for Portable ApplicationsV(BR)DSS RDS(on) TYP ID MAX Surface Mount TSOP-6 Package Saves Board Space38 mW @ -10 V Improved Efficiency for Battery Applications-30 V -4.7 A68 mW @ -4.5 V

 5.2. Size:138K  onsemi
 ntgs4111p.pdf pdf_icon

NTGS4111PT

NTGS4111PPower MOSFET-30 V, -4.7 A, Single P-Channel, TSOP-6Features Leading -30 V Trench Process for Low RDS(on)http://onsemi.com Low Profile Package Suitable for Portable Applications Surface Mount TSOP-6 Package Saves Board SpaceV(BR)DSS RDS(on) TYP ID MAX Improved Efficiency for Battery Applications38 mW @ -10 V Pb-Free Package is Available-30 V -4.7 A

MOSTRAR MÁS

Otros transistores... CS120N08A8 , SSC8033GS6 , SSC8035GS6 , CS7N60A3R , CS7N60A4R , NCE0108AS , NTF5P03T3G , NTGS3443T1G , IRF730 , CS7N60FA9R , SSM3K335 , CS7N65A3R , SQ2348ES-T1 , CS7N65A4R , STD2NB60T4 , CS7N65FA9R , SI4848DY-T1 .

History: IPN60R600PFD7S | HRD13N10K | NVATS4A103PZ | IRFP342R

 

 
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