NTGS4111PT Todos los transistores

 ..1. Size:858K  cn vbsemi
 ntgs4111pt.pdf

NTGS4111PT www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-

 0.1. Size:134K  onsemi
 ntgs4111pt1.pdf

NTGS4111P Power MOSFET -30 V, -4.7 A, Single P-Channel, TSOP-6 Features Leading -30 V Trench Process for Low RDS(on) http //onsemi.com Low Profile Package Suitable for Portable Applications Surface Mount TSOP-6 Package Saves Board Space V(BR)DSS RDS(on) TYP ID MAX Improved Efficiency for Battery Applications 38 mW @ -10 V Pb-Free Package is Available -30 V -4.7 A

 5.1. Size:203K  onsemi
 ntgs4111p nvgs4111p.pdf

NTGS4111P, NVGS4111P MOSFET Power, Single, P-Channel, TSOP-6 -30 V, -4.7 A Features http //onsemi.com Leading -30 V Trench Process for Low RDS(on) Low Profile Package Suitable for Portable Applications V(BR)DSS RDS(on) TYP ID MAX Surface Mount TSOP-6 Package Saves Board Space 38 mW @ -10 V Improved Efficiency for Battery Applications -30 V -4.7 A 68 mW @ -4.5 V

 5.2. Size:138K  onsemi
 ntgs4111p.pdf

NTGS4111P Power MOSFET -30 V, -4.7 A, Single P-Channel, TSOP-6 Features Leading -30 V Trench Process for Low RDS(on) http //onsemi.com Low Profile Package Suitable for Portable Applications Surface Mount TSOP-6 Package Saves Board Space V(BR)DSS RDS(on) TYP ID MAX Improved Efficiency for Battery Applications 38 mW @ -10 V Pb-Free Package is Available -30 V -4.7 A