CS7N65FA9R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CS7N65FA9R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 24 nC
   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 93 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO220F

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CS7N65FA9R Datasheet (PDF)

..1. Size:275K wuxi china
cs7n65fa9r.pdf

Silicon N-Channel Power MOSFET R CS7N65F A9R General Description VDSS 650 V CS7N65F A9R, the silicon N-channel Enhanced ID 7 A PD(TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

5.1. Size:750K wuxi china
cs7n65fa9tdy.pdf

Silicon N-Channel Power MOSFET R CS7N65F A9TDY General Description VDSS 650 V CS7N65F A9TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

5.2. Size:625K wuxi china
cs7n65fa9d.pdf

Silicon N-Channel Power MOSFET R CS7N65F A9D General Description VDSS 650 V CS7N65F A9D, the silicon N-channel Enhanced ID 7 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.98 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

7.1. Size:757K jilin sino
jcs7n65bb jcs7n65sb jcs7n65cb jcs7n65fb.pdf

N RN-CHANNEL MOSFET JCS7N65B MAIN CHARACTERISTICS ID 7.0 A VDSS 650 V Package Rdson-max 1.3 (@Vgs=10V Qg-typ 25 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

7.2. Size:2018K jilin sino
jcs7n65ve jcs7n65re jcs7n65ce jcs7n65se jcs7n65be jcs7n65fe.pdf

N RN-CHANNEL MOSFET JCS7N65E MAIN CHARACTERISTICS Package ID 7.0 A VDSS 650 V Rdson-max1.1 @Vgs=10V Qg-typ 23 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

7.3. Size:750K crhj
cs7n65f a9tdy.pdf

7.4. Size:269K crhj
cs7n65f a9r.pdf

7.5. Size:427K convert
cs7n65f cs7n65p cs7n65k.pdf

nvertSuzhou Convert Semiconductor Co ., Ltd.CS7N65F,CS7N65P, CS7N65K650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS7N65F TO-220F CS7N65

Otros transistores... NTGS3443T1G , NTGS4111PT , CS7N60FA9R , SSM3K335 , CS7N65A3R , SQ2348ES-T1 , CS7N65A4R , STD2NB60T4 , 2N7000 , SI4848DY-T1 , SI4848DY-T1-E3 , SI4850DY-T1 , CS7N80FA9 , ST2315S23R , ST2341S23R , STB60N06-14 , STC5NF20V .

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