Справочник MOSFET. CS7N65FA9R

 

CS7N65FA9R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CS7N65FA9R
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 24 nC
   trⓘ - Время нарастания: 21 ns
   Cossⓘ - Выходная емкость: 93 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для CS7N65FA9R

 

 

CS7N65FA9R Datasheet (PDF)

 ..1. Size:275K  wuxi china
 cs7n65fa9r.pdf

CS7N65FA9R CS7N65FA9R

Silicon N-Channel Power MOSFET R CS7N65F A9R General Description VDSS 650 V CS7N65F A9R, the silicon N-channel Enhanced ID 7 A PD(TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 5.1. Size:750K  wuxi china
 cs7n65fa9tdy.pdf

CS7N65FA9R CS7N65FA9R

Silicon N-Channel Power MOSFET R CS7N65F A9TDY General Description VDSS 650 V CS7N65F A9TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 5.2. Size:625K  wuxi china
 cs7n65fa9d.pdf

CS7N65FA9R CS7N65FA9R

Silicon N-Channel Power MOSFET R CS7N65F A9D General Description VDSS 650 V CS7N65F A9D, the silicon N-channel Enhanced ID 7 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.98 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.1. Size:757K  jilin sino
 jcs7n65bb jcs7n65sb jcs7n65cb jcs7n65fb.pdf

CS7N65FA9R CS7N65FA9R

N RN-CHANNEL MOSFET JCS7N65B MAIN CHARACTERISTICS ID 7.0 A VDSS 650 V Package Rdson-max 1.3 (@Vgs=10V Qg-typ 25 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 7.2. Size:2018K  jilin sino
 jcs7n65ve jcs7n65re jcs7n65ce jcs7n65se jcs7n65be jcs7n65fe.pdf

CS7N65FA9R CS7N65FA9R

N RN-CHANNEL MOSFET JCS7N65E MAIN CHARACTERISTICS Package ID 7.0 A VDSS 650 V Rdson-max1.1 @Vgs=10V Qg-typ 23 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 7.3. Size:750K  crhj
 cs7n65f a9tdy.pdf

CS7N65FA9R CS7N65FA9R

Silicon N-Channel Power MOSFET R CS7N65F A9TDY General Description VDSS 650 V CS7N65F A9TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.4. Size:269K  crhj
 cs7n65f a9r.pdf

CS7N65FA9R CS7N65FA9R

Silicon N-Channel Power MOSFET R CS7N65F A9R General Description VDSS 650 V CS7N65F A9R, the silicon N-channel Enhanced ID 7 A PD(TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.5. Size:427K  convert
 cs7n65f cs7n65p cs7n65k.pdf

CS7N65FA9R CS7N65FA9R

nvertSuzhou Convert Semiconductor Co ., Ltd.CS7N65F,CS7N65P, CS7N65K650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS7N65F TO-220F CS7N65

Другие MOSFET... NTGS3443T1G , NTGS4111PT , CS7N60FA9R , SSM3K335 , CS7N65A3R , SQ2348ES-T1 , CS7N65A4R , STD2NB60T4 , 2N7000 , SI4848DY-T1 , SI4848DY-T1-E3 , SI4850DY-T1 , CS7N80FA9 , ST2315S23R , ST2341S23R , STB60N06-14 , STC5NF20V .

 

 
Back to Top