CS8N80A8H Todos los transistores

 

CS8N80A8H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS8N80A8H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 120 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.25 Ohm
   Paquete / Cubierta: TO220AB
 

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CS8N80A8H Datasheet (PDF)

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CS8N80A8H

Silicon N-Channel Power MOSFET R CS8N80 A8H VDSS 800 V General Description ID 8 A CS8N80 A8H, the silicon N-channel Enhanced PD (TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.2. Size:228K  crhj
 cs8n80 a8d.pdf pdf_icon

CS8N80A8H

Silicon N-Channel Power MOSFET R CS8N80 A8D VDSS 800 V General Description ID 8 A CS8N80 A8D, the silicon N-channel Enhanced PD (TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.0 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.3. Size:232K  crhj
 cs8n80f a9h.pdf pdf_icon

CS8N80A8H

Silicon N-Channel Power MOSFET R CS8N80F A9H VDSS 800 V General Description ID 8 A CS8N80F A9H, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 8.4. Size:350K  crhj
 cs8n80f a9d.pdf pdf_icon

CS8N80A8H

Silicon N-Channel Power MOSFET R CS8N80F A9D VDSS 800 V General Description ID 8 A CS8N80F A9D, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

MOSTRAR MÁS

Otros transistores... VB1101M , CS8N60ARD , TP0610K-T1 , TPC8103 , TPC8104 , TK40P04M , CS8N70FA9H2-G , CS8N80A8D , IRF640N , VB1330 , CS8N80FA9H , CS8N90A8 , CS8N90FA9 , VB162K , CS90N03B3 , UT9435G , UTM4052L .

History: SML30J70 | OSG55R030HZF | TPC6113 | IPP80N06S4-07 | IXTP6N100D2 | WMB90P03TS | IPP120N04S3-02

 

 
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