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CS8N80A8H Spec and Replacement


   Type Designator: CS8N80A8H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
   Package: TO220AB

 CS8N80A8H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS8N80A8H Specs

 8.1. Size:232K  crhj
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CS8N80A8H

Silicon N-Channel Power MOSFET R CS8N80 A8H VDSS 800 V General Description ID 8 A CS8N80 A8H, the silicon N-channel Enhanced PD (TC=25 ) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒

 8.2. Size:228K  crhj
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CS8N80A8H

Silicon N-Channel Power MOSFET R CS8N80 A8D VDSS 800 V General Description ID 8 A CS8N80 A8D, the silicon N-channel Enhanced PD (TC=25 ) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.0 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

 8.3. Size:232K  crhj
 cs8n80f a9h.pdf pdf_icon

CS8N80A8H

Silicon N-Channel Power MOSFET R CS8N80F A9H VDSS 800 V General Description ID 8 A CS8N80F A9H, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

 8.4. Size:350K  crhj
 cs8n80f a9d.pdf pdf_icon

CS8N80A8H

Silicon N-Channel Power MOSFET R CS8N80F A9D VDSS 800 V General Description ID 8 A CS8N80F A9D, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

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Detailed specifications: VB1101M , CS8N60ARD , TP0610K-T1 , TPC8103 , TPC8104 , TK40P04M , CS8N70FA9H2-G , CS8N80A8D , IRFB4110 , VB1330 , CS8N80FA9H , CS8N90A8 , CS8N90FA9 , VB162K , CS90N03B3 , UT9435G , UTM4052L .

History: CS8N90A8 | 25P10

Keywords - CS8N80A8H MOSFET specs

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