CS8N80F_A9H Todos los transistores

 

CS8N80F_A9H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS8N80F_A9H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 120 nS

Conductancia de drenaje-sustrato (Cd): 160 pF

Resistencia drenaje-fuente RDS(on): 1.25 Ohm

Empaquetado / Estuche: TO220F

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CS8N80F_A9H Datasheet (PDF)

1.1. cs8n80f a9h.pdf Size:232K _crhj

CS8N80F_A9H
CS8N80F_A9H

Silicon N-Channel Power MOSFET R ○ CS8N80F A9H VDSS 800 V General Description: ID 8 A CS8N80F A9H, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.2. cs8n80f a9d.pdf Size:350K _crhj

CS8N80F_A9H
CS8N80F_A9H

Silicon N-Channel Power MOSFET R ○ CS8N80F A9D VDSS 800 V General Description: ID 8 A CS8N80F A9D, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 3.1. cs8n80fa9d.pdf Size:350K _update_mosfet

CS8N80F_A9H
CS8N80F_A9H

Silicon N-Channel Power MOSFET R ○ CS8N80F A9D VDSS 800 V General Description: ID 8 A CS8N80F A9D, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

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