All MOSFET. CS8N80F_A9H Datasheet

 

CS8N80F_A9H MOSFET. Datasheet pdf. Equivalent

Type Designator: CS8N80F_A9H

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 120 nS

Drain-Source Capacitance (Cd): 160 pF

Maximum Drain-Source On-State Resistance (Rds): 1.25 Ohm

Package: TO220F

CS8N80F_A9H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS8N80F_A9H Datasheet (PDF)

1.1. cs8n80f a9d.pdf Size:350K _crhj

CS8N80F_A9H
CS8N80F_A9H

Silicon N-Channel Power MOSFET R ○ CS8N80F A9D VDSS 800 V General Description: ID 8 A CS8N80F A9D, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.2. cs8n80f a9h.pdf Size:232K _crhj

CS8N80F_A9H
CS8N80F_A9H

Silicon N-Channel Power MOSFET R ○ CS8N80F A9H VDSS 800 V General Description: ID 8 A CS8N80F A9H, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 4.1. cs8n80 a8d.pdf Size:228K _crhj

CS8N80F_A9H
CS8N80F_A9H

Silicon N-Channel Power MOSFET R ○ CS8N80 A8D VDSS 800 V General Description: ID 8 A CS8N80 A8D, the silicon N-channel Enhanced PD (TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.0 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

4.2. cs8n80 a8h.pdf Size:232K _crhj

CS8N80F_A9H
CS8N80F_A9H

Silicon N-Channel Power MOSFET R ○ CS8N80 A8H VDSS 800 V General Description: ID 8 A CS8N80 A8H, the silicon N-channel Enhanced PD (TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Datasheet: CS8N60F_A9H , CS8N65_A0H , CS8N65_A8H , CS8N65F_A9H , CS8N70F_A9H2-G , CS8N80_A8D , CS8N80_A8H , CS8N80F_A9D , IRF3710 , CS8N90_A8 , CS8N90F_A9 , CS8N90F_A9HD , CS90N03_B3 , CS90N03_B4 , CS9N90_ANHD , CS9N90F_A9D , CSZ44V-1 .

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