All MOSFET. CS8N80F_A9H Datasheet

 

CS8N80F_A9H MOSFET. Datasheet pdf. Equivalent

Type Designator: CS8N80F_A9H

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 120 nS

Drain-Source Capacitance (Cd): 160 pF

Maximum Drain-Source On-State Resistance (Rds): 1.25 Ohm

Package: TO220F

CS8N80F_A9H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CS8N80F_A9H Datasheet (PDF)

1.1. cs8n80f a9d.pdf Size:350K _crhj

CS8N80F_A9H
CS8N80F_A9H

Silicon N-Channel Power MOSFET R ○ CS8N80F A9D VDSS 800 V General Description: ID 8 A CS8N80F A9D, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.2. cs8n80f a9h.pdf Size:232K _crhj

CS8N80F_A9H
CS8N80F_A9H

Silicon N-Channel Power MOSFET R ○ CS8N80F A9H VDSS 800 V General Description: ID 8 A CS8N80F A9H, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 4.1. cs8n80 a8d.pdf Size:228K _crhj

CS8N80F_A9H
CS8N80F_A9H

Silicon N-Channel Power MOSFET R ○ CS8N80 A8D VDSS 800 V General Description: ID 8 A CS8N80 A8D, the silicon N-channel Enhanced PD (TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.0 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

4.2. cs8n80 a8h.pdf Size:232K _crhj

CS8N80F_A9H
CS8N80F_A9H

Silicon N-Channel Power MOSFET R ○ CS8N80 A8H VDSS 800 V General Description: ID 8 A CS8N80 A8H, the silicon N-channel Enhanced PD (TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
Back to Top

 


CS8N80F_A9H
  CS8N80F_A9H
  CS8N80F_A9H
  CS8N80F_A9H
 

social 

LIST

Last Update

MOSFET: CS5210PBF | CS5210 | CS520 | CS5103 | CS50N80 | CS50N06D | CS50N06 | CS4N70FA9D | CS4N70ARHD | CS4N65F | CS4N65A8HD | CS4N65A4TDY | CS4N65A4HDY | CS4N65A3TDY | CS4N65A3HDY |

 

 

 
Back to Top