CS8N80F_A9H MOSFET. Datasheet pdf. Equivalent
Type Designator: CS8N80F_A9H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 8 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 120 nS
Drain-Source Capacitance (Cd): 160 pF
Maximum Drain-Source On-State Resistance (Rds): 1.25 Ohm
Package: TO220F
CS8N80F_A9H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS8N80F_A9H Datasheet (PDF)
1.1. cs8n80f a9d.pdf 
Size:350K _crhj
Silicon N-Channel Power MOSFET R ○ CS8N80F A9D VDSS 800 V General Description： ID 8 A CS8N80F A9D, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
1.2. cs8n80f a9h.pdf Size:232K _crhj
Silicon N-Channel Power MOSFET R ○ CS8N80F A9H VDSS 800 V General Description： ID 8 A CS8N80F A9H, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
4.1. cs8n80 a8d.pdf Size:228K _crhj
Silicon N-Channel Power MOSFET R ○ CS8N80 A8D VDSS 800 V General Description： ID 8 A CS8N80 A8D, the silicon N-channel Enhanced PD (TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.0 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
4.2. cs8n80 a8h.pdf Size:232K _crhj
Silicon N-Channel Power MOSFET R ○ CS8N80 A8H VDSS 800 V General Description： ID 8 A CS8N80 A8H, the silicon N-channel Enhanced PD (TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .
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MOSFET: CS5210PBF | CS5210 | CS520 | CS5103 | CS50N80 | CS50N06D | CS50N06 | CS4N70FA9D | CS4N70ARHD | CS4N65F | CS4N65A8HD | CS4N65A4TDY | CS4N65A4HDY | CS4N65A3TDY | CS4N65A3HDY |