All MOSFET. CS8N80FA9H Datasheet

 

CS8N80FA9H Datasheet and Replacement


   Type Designator: CS8N80FA9H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
   Package: TO220F
 

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CS8N80FA9H Datasheet (PDF)

 5.1. Size:350K  wuxi china
 cs8n80fa9d.pdf pdf_icon

CS8N80FA9H

Silicon N-Channel Power MOSFET R CS8N80F A9D VDSS 800 V General Description ID 8 A CS8N80F A9D, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.1. Size:232K  crhj
 cs8n80f a9h.pdf pdf_icon

CS8N80FA9H

Silicon N-Channel Power MOSFET R CS8N80F A9H VDSS 800 V General Description ID 8 A CS8N80F A9H, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.2. Size:350K  crhj
 cs8n80f a9d.pdf pdf_icon

CS8N80FA9H

Silicon N-Channel Power MOSFET R CS8N80F A9D VDSS 800 V General Description ID 8 A CS8N80F A9D, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

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Datasheet: TP0610K-T1 , TPC8103 , TPC8104 , TK40P04M , CS8N70FA9H2-G , CS8N80A8D , CS8N80A8H , VB1330 , 10N60 , CS8N90A8 , CS8N90FA9 , VB162K , CS90N03B3 , UT9435G , UTM4052L , UTM6016G , CSZ44V-1 .

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