AO4600 Todos los transistores

 ..1. Size:1436K  kexin
 ao4600.pdf

SMD Type MOSFET Complementary Trench MOSFET AO4600 (KO4600) SOP-8 Unit mm Features N-Channel VDS (V) = 30V ID = 6.9 A (VGS = 10V) 1.50 0.15 RDS(ON) 27m (VGS = 10V) RDS(ON) 32m (VGS = 4.5V) 1 S2 5 D1 RDS(ON) 50m (VGS = 2.5V) 6 D1 2 G2 7 D2 3 S1 P-Channel 8 D2 4 G1 VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) 49m (VGS = -10V)

 9.1. Size:545K  aosemi
 ao4606.pdf

AO4606 30V Complementary MOSFET General Description Product Summary The AO4606 uses advanced trench technology N-Channel P-Channel MOSFETs to provide excellent RDS(ON) and low gate VDS= 30V -30V charge. The complementary MOSFETs may be used to ID= 6A (VGS=10V) -6.5A (VGS=-10V) form a level shifted high side switch, and for a host of RDS(ON) RDS(ON) other applications.

 9.2. Size:612K  aosemi
 ao4607.pdf

AO4607 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4607/L uses advanced trench n-channel p-channel technology MOSFETs to provide VDS (V) = 30V -30V excellent RDS(ON) and low gate charge. ID = 6.9A (VGS=10V) -6A (VGS=-10V) The complementary MOSFETs may be RDS(ON) RDS(ON) used in inverter and other applications. A

 9.3. Size:2601K  kexin
 ao4606.pdf

SMD Type MOSFET Complementary Trench MOSFET AO4606 (KO4606) SOP-8 Features N-Channel VDS=30V ID=6A RDS(ON) 30m (VGS = 10V) RDS(ON) 42m (VGS = 4.5V) 1.50 0.15 P-Channel VDS=-30V ID=-6.5A RDS(ON) 28m (VGS =-10V) 1 Source2 8 Drain2 RDS(ON) 44m (VGS =-4.5V) 7 Drain2 2 Gate2 6 Drain1 3 Source1 5 Drain1 4 Gate1 D2 D1 G2 G1 S2 S1 N-chann

 9.4. Size:3386K  kexin
 ao4604.pdf

SMD Type MOSFET Complementary Trench MOSFET AO4604 (KO4604) SOP-8 Unit mm Features N-Channel VDS (V) = 30V 1.50 0.15 ID = 6.9 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 42m (VGS = 4.5V) 1 S2 5 D1 6 D1 2 G2 P-Channel 7 D2 3 S1 8 D2 4 G1 VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) 52m (VGS = -10V) RDS(ON) 87m (VGS = -4.5V)

 9.5. Size:1733K  kexin
 ao4609.pdf

SMD Type MOSFET Complementary Trench MOSFET AO4609 (KO4609) SOP-8 Unit mm Features N-Channel VDS (V) = 30V ID = 8.5 A (VGS = 10V) 1.50 0.15 RDS(ON) 18m (VGS = 10V) RDS(ON) 28m (VGS = 4.5V) 1 S2 5 D1 P-Channel 6 D1 2 G2 7 D2 VDS (V) = -30V 3 S1 8 D2 4 G1 ID = -3 A (VGS = -10V) RDS(ON) 130m (VGS = -10V) RDS(ON) 180m (VGS = -4.5V

 9.6. Size:964K  cn vbsemi
 ao4602.pdf

AO4602 www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VGS =

 9.7. Size:963K  cn vbsemi
 ao4606a.pdf

AO4606A www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VGS