AO4600 Datasheet. Specs and Replacement

Type Designator: AO4600  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6.9(5) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027(0.049) Ohm

Package: SOP8

  📄📄 Copy 

AO4600 substitution

- MOSFET ⓘ Cross-Reference Search

 

AO4600 datasheet

 ..1. Size:1436K  kexin
 ao4600.pdf pdf_icon

AO4600

SMD Type MOSFET Complementary Trench MOSFET AO4600 (KO4600) SOP-8 Unit mm Features N-Channel VDS (V) = 30V ID = 6.9 A (VGS = 10V) 1.50 0.15 RDS(ON) 27m (VGS = 10V) RDS(ON) 32m (VGS = 4.5V) 1 S2 5 D1 RDS(ON) 50m (VGS = 2.5V) 6 D1 2 G2 7 D2 3 S1 P-Channel 8 D2 4 G1 VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) 49m (VGS = -10V) ... See More ⇒

 9.1. Size:545K  aosemi
 ao4606.pdf pdf_icon

AO4600

AO4606 30V Complementary MOSFET General Description Product Summary The AO4606 uses advanced trench technology N-Channel P-Channel MOSFETs to provide excellent RDS(ON) and low gate VDS= 30V -30V charge. The complementary MOSFETs may be used to ID= 6A (VGS=10V) -6.5A (VGS=-10V) form a level shifted high side switch, and for a host of RDS(ON) RDS(ON) other applications. ... See More ⇒

 9.2. Size:612K  aosemi
 ao4607.pdf pdf_icon

AO4600

AO4607 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4607/L uses advanced trench n-channel p-channel technology MOSFETs to provide VDS (V) = 30V -30V excellent RDS(ON) and low gate charge. ID = 6.9A (VGS=10V) -6A (VGS=-10V) The complementary MOSFETs may be RDS(ON) RDS(ON) used in inverter and other applications. A ... See More ⇒

 9.3. Size:2601K  kexin
 ao4606.pdf pdf_icon

AO4600

SMD Type MOSFET Complementary Trench MOSFET AO4606 (KO4606) SOP-8 Features N-Channel VDS=30V ID=6A RDS(ON) 30m (VGS = 10V) RDS(ON) 42m (VGS = 4.5V) 1.50 0.15 P-Channel VDS=-30V ID=-6.5A RDS(ON) 28m (VGS =-10V) 1 Source2 8 Drain2 RDS(ON) 44m (VGS =-4.5V) 7 Drain2 2 Gate2 6 Drain1 3 Source1 5 Drain1 4 Gate1 D2 D1 G2 G1 S2 S1 N-chann... See More ⇒

SHOW MORE

Detailed specifications: CS8N90A8, CS8N90FA9, VB162K, CS90N03B3, UT9435G, UTM4052L, UTM6016G, CSZ44V-1, IRF9540, AO4604, AO4609, AO4614A, AO4624, SI4558DY, SI5504DC, SI5513CD, SIA517DJ

Keywords - AO4600 MOSFET specs

 AO4600 cross reference

 AO4600 equivalent finder

 AO4600 pdf lookup

 AO4600 substitution

 AO4600 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.