All MOSFET. AO4600 Datasheet

 

AO4600 MOSFET. Datasheet pdf. Equivalent

Type Designator: AO4600

SMD Transistor Code: 4600

Type of Transistor: MOSFET

Type of Control Channel: NP -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 6.9(5) A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.027(0.049) Ohm

Package: SOP8

AO4600 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AO4600 Datasheet (PDF)

1.1. ao4600.pdf Size:1436K _kexin

AO4600
AO4600

SMD Type MOSFET Complementary Trench MOSFET AO4600 (KO4600) SOP-8 Unit:mm ■ Features ● N-Channel : VDS (V) = 30V ID = 6.9 A (VGS = 10V) 1.50 0.15 RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) 1 S2 5 D1 RDS(ON) < 50mΩ (VGS = 2.5V) 6 D1 2 G2 7 D2 3 S1 ● P-Channel : 8 D2 4 G1 VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 49mΩ (VGS = -10V)

5.1. ao4607.pdf Size:612K _update

AO4600
AO4600

AO4607 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4607/L uses advanced trench n-channel p-channel technology MOSFETs to provide VDS (V) = 30V -30V excellent RDS(ON) and low gate charge. ID = 6.9A (VGS=10V) -6A (VGS=-10V) The complementary MOSFETs may be RDS(ON) RDS(ON) used in inverter and other applications. A < 28mΩ (VGS=10V) < 35m

5.2. ao4606.pdf Size:545K _aosemi

AO4600
AO4600

AO4606 30V Complementary MOSFET General Description Product Summary The AO4606 uses advanced trench technology N-Channel P-Channel MOSFETs to provide excellent RDS(ON) and low gate VDS= 30V -30V charge. The complementary MOSFETs may be used to ID= 6A (VGS=10V) -6.5A (VGS=-10V) form a level shifted high side switch, and for a host of RDS(ON) RDS(ON) other applications. < 30mΩ (

 5.3. ao4606.pdf Size:2601K _kexin

AO4600
AO4600

SMD Type MOSFET Complementary Trench MOSFET AO4606 (KO4606) SOP-8 ■ Features ● N-Channel:VDS=30V ID=6A RDS(ON) < 30mΩ (VGS = 10V) RDS(ON) < 42mΩ (VGS = 4.5V) 1.50 0.15 ● P-Channel:VDS=-30V ID=-6.5A RDS(ON) < 28mΩ (VGS =-10V) 1 Source2 8 Drain2 RDS(ON) < 44mΩ (VGS =-4.5V) 7 Drain2 2 Gate2 6 Drain1 3 Source1 5 Drain1 4 Gate1 D2 D1 G2 G1 S2 S1 N-chann

5.4. ao4609.pdf Size:1733K _kexin

AO4600
AO4600

SMD Type MOSFET Complementary Trench MOSFET AO4609 (KO4609) SOP-8 Unit:mm ■ Features ● N-Channel : VDS (V) = 30V ID = 8.5 A (VGS = 10V) 1.50 0.15 RDS(ON) < 18mΩ (VGS = 10V) RDS(ON) < 28mΩ (VGS = 4.5V) 1 S2 5 D1 ● P-Channel : 6 D1 2 G2 7 D2 VDS (V) = -30V 3 S1 8 D2 4 G1 ID = -3 A (VGS = -10V) RDS(ON) < 130mΩ (VGS = -10V) RDS(ON) < 180mΩ (VGS = -4.5V

 5.5. ao4604.pdf Size:3386K _kexin

AO4600
AO4600

SMD Type MOSFET Complementary Trench MOSFET AO4604 (KO4604) SOP-8 Unit:mm ■ Features ● N-Channel : VDS (V) = 30V 1.50 0.15 ID = 6.9 A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 42mΩ (VGS = 4.5V) 1 S2 5 D1 6 D1 2 G2 ● P-Channel : 7 D2 3 S1 8 D2 4 G1 VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V)

Datasheet: PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .

 
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