AO4600 MOSFET. Datasheet pdf. Equivalent
Type Designator: AO4600
SMD Transistor Code: 4600
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Drain Current |Id|: 6.9(5) A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.027(0.049) Ohm
Package: SOP8
AO4600 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO4600 Datasheet (PDF)
1.1. ao4600.pdf 
Size:1436K _kexin
SMD Type MOSFET Complementary Trench MOSFET AO4600 (KO4600) SOP-8 Unit:mm ■ Features ● N-Channel : VDS (V) = 30V ID = 6.9 A (VGS = 10V) 1.50 0.15 RDS(ON) ＜ 27mΩ (VGS = 10V) RDS(ON) ＜ 32mΩ (VGS = 4.5V) 1 S2 5 D1 RDS(ON) ＜ 50mΩ (VGS = 2.5V) 6 D1 2 G2 7 D2 3 S1 ● P-Channel : 8 D2 4 G1 VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) ＜ 49mΩ (VGS = -10V)
5.1. ao4607.pdf Size:612K _update
AO4607 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4607/L uses advanced trench n-channel p-channel technology MOSFETs to provide VDS (V) = 30V -30V excellent RDS(ON) and low gate charge. ID = 6.9A (VGS=10V) -6A (VGS=-10V) The complementary MOSFETs may be RDS(ON) RDS(ON) used in inverter and other applications. A < 28mΩ (VGS=10V) < 35m
5.2. ao4606.pdf Size:545K _aosemi
AO4606 30V Complementary MOSFET General Description Product Summary The AO4606 uses advanced trench technology N-Channel P-Channel MOSFETs to provide excellent RDS(ON) and low gate VDS= 30V -30V charge. The complementary MOSFETs may be used to ID= 6A (VGS=10V) -6.5A (VGS=-10V) form a level shifted high side switch, and for a host of RDS(ON) RDS(ON) other applications. < 30mΩ (
5.3. ao4606.pdf Size:2601K _kexin
SMD Type MOSFET Complementary Trench MOSFET AO4606 (KO4606) SOP-8 ■ Features ● N-Channel：VDS=30V ID=6A RDS(ON) ＜ 30mΩ (VGS = 10V) RDS(ON) ＜ 42mΩ (VGS = 4.5V) 1.50 0.15 ● P-Channel：VDS=-30V ID=-6.5A RDS(ON) ＜ 28mΩ (VGS =-10V) 1 Source2 8 Drain2 RDS(ON) ＜ 44mΩ (VGS =-4.5V) 7 Drain2 2 Gate2 6 Drain1 3 Source1 5 Drain1 4 Gate1 D2 D1 G2 G1 S2 S1 N-chann
5.4. ao4609.pdf Size:1733K _kexin
SMD Type MOSFET Complementary Trench MOSFET AO4609 (KO4609) SOP-8 Unit:mm ■ Features ● N-Channel : VDS (V) = 30V ID = 8.5 A (VGS = 10V) 1.50 0.15 RDS(ON) ＜ 18mΩ (VGS = 10V) RDS(ON) ＜ 28mΩ (VGS = 4.5V) 1 S2 5 D1 ● P-Channel : 6 D1 2 G2 7 D2 VDS (V) = -30V 3 S1 8 D2 4 G1 ID = -3 A (VGS = -10V) RDS(ON) ＜ 130mΩ (VGS = -10V) RDS(ON) ＜ 180mΩ (VGS = -4.5V
5.5. ao4604.pdf Size:3386K _kexin
SMD Type MOSFET Complementary Trench MOSFET AO4604 (KO4604) SOP-8 Unit:mm ■ Features ● N-Channel : VDS (V) = 30V 1.50 0.15 ID = 6.9 A (VGS = 10V) RDS(ON) ＜ 28mΩ (VGS = 10V) RDS(ON) ＜ 42mΩ (VGS = 4.5V) 1 S2 5 D1 6 D1 2 G2 ● P-Channel : 7 D2 3 S1 8 D2 4 G1 VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) ＜ 52mΩ (VGS = -10V) RDS(ON) ＜ 87mΩ (VGS = -4.5V)
Datasheet: CS8N90_A8 , CS8N90F_A9 , CS8N90F_A9HD , CS90N03_B3 , CS90N03_B4 , CS9N90_ANHD , CS9N90F_A9D , CSZ44V-1 , IRF830 , AO4604 , AO4609 , AO4614A , AO4624 , SI4558DY , SI5504DC , SI5513CD , SIA517DJ .
