AO4604 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO4604
   Código: 4604
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.9(5) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 6.74 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028(0.052) Ohm
   Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET AO4604

AO4604 Datasheet (PDF)

..1. Size:3386K kexin
ao4604.pdf

SMD Type MOSFETComplementary Trench MOSFET AO4604 (KO4604)SOP-8 Unit:mm Features N-Channel : VDS (V) = 30V1.50 0.15ID = 6.9 A (VGS = 10V)RDS(ON) 28m (VGS = 10V)RDS(ON) 42m (VGS = 4.5V)1 S2 5 D1 6 D12 G2 P-Channel : 7 D23 S18 D24 G1 VDS (V) = -30VID = -5 A (VGS = -10V)RDS(ON) 52m (VGS = -10V)RDS(ON) 87m (VGS = -4.5V)

9.1. Size:545K aosemi
ao4606.pdf

AO460630V Complementary MOSFETGeneral Description Product SummaryThe AO4606 uses advanced trench technology N-Channel P-ChannelMOSFETs to provide excellent RDS(ON) and low gateVDS= 30V -30Vcharge. The complementary MOSFETs may be used to ID= 6A (VGS=10V) -6.5A (VGS=-10V)form a level shifted high side switch, and for a host of RDS(ON) RDS(ON)other applications.

9.2. Size:612K aosemi
ao4607.pdf

AO4607Complementary Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AO4607/L uses advanced trenchn-channel p-channeltechnology MOSFETs to provideVDS (V) = 30V -30Vexcellent RDS(ON) and low gate charge.ID = 6.9A (VGS=10V) -6A (VGS=-10V)The complementary MOSFETs may beRDS(ON) RDS(ON)used in inverter and other applications. A

9.3. Size:2601K kexin
ao4606.pdf

SMD Type MOSFETComplementary Trench MOSFET AO4606 (KO4606)SOP-8 Features N-ChannelVDS=30V ID=6ARDS(ON) 30m (VGS = 10V)RDS(ON) 42m (VGS = 4.5V)1.50 0.15 P-ChannelVDS=-30V ID=-6.5ARDS(ON) 28m (VGS =-10V)1 Source2 8 Drain2RDS(ON) 44m (VGS =-4.5V)7 Drain22 Gate26 Drain13 Source15 Drain14 Gate1D2 D1G2 G1S2 S1N-chann

9.4. Size:1436K kexin
ao4600.pdf

SMD Type MOSFETComplementary Trench MOSFET AO4600 (KO4600)SOP-8 Unit:mm Features N-Channel : VDS (V) = 30VID = 6.9 A (VGS = 10V)1.50 0.15RDS(ON) 27m (VGS = 10V)RDS(ON) 32m (VGS = 4.5V)1 S2 5 D1 RDS(ON) 50m (VGS = 2.5V)6 D12 G27 D23 S1 P-Channel : 8 D24 G1 VDS (V) = -30VID = -5 A (VGS = -10V)RDS(ON) 49m (VGS = -10V)

9.5. Size:1733K kexin
ao4609.pdf

SMD Type MOSFETComplementary Trench MOSFET AO4609 (KO4609)SOP-8 Unit:mm Features N-Channel : VDS (V) = 30VID = 8.5 A (VGS = 10V)1.50 0.15RDS(ON) 18m (VGS = 10V)RDS(ON) 28m (VGS = 4.5V)1 S2 5 D1 P-Channel : 6 D12 G27 D2 VDS (V) = -30V 3 S18 D24 G1ID = -3 A (VGS = -10V)RDS(ON) 130m (VGS = -10V)RDS(ON) 180m (VGS = -4.5V

9.6. Size:964K cn vbsemi
ao4602.pdf

AO4602www.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS =

9.7. Size:963K cn vbsemi
ao4606a.pdf

AO4606Awww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS

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