All MOSFET. AO4604 Datasheet

 

AO4604 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AO4604
   Marking Code: 4604
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 6.9(5) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.74 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028(0.052) Ohm
   Package: SOP8

 AO4604 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AO4604 Datasheet (PDF)

 ..1. Size:3386K  kexin
 ao4604.pdf

AO4604 AO4604

SMD Type MOSFETComplementary Trench MOSFET AO4604 (KO4604)SOP-8 Unit:mm Features N-Channel : VDS (V) = 30V1.50 0.15ID = 6.9 A (VGS = 10V)RDS(ON) 28m (VGS = 10V)RDS(ON) 42m (VGS = 4.5V)1 S2 5 D1 6 D12 G2 P-Channel : 7 D23 S18 D24 G1 VDS (V) = -30VID = -5 A (VGS = -10V)RDS(ON) 52m (VGS = -10V)RDS(ON) 87m (VGS = -4.5V)

 9.1. Size:545K  aosemi
 ao4606.pdf

AO4604 AO4604

AO460630V Complementary MOSFETGeneral Description Product SummaryThe AO4606 uses advanced trench technology N-Channel P-ChannelMOSFETs to provide excellent RDS(ON) and low gateVDS= 30V -30Vcharge. The complementary MOSFETs may be used to ID= 6A (VGS=10V) -6.5A (VGS=-10V)form a level shifted high side switch, and for a host of RDS(ON) RDS(ON)other applications.

 9.2. Size:612K  aosemi
 ao4607.pdf

AO4604 AO4604

AO4607Complementary Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AO4607/L uses advanced trenchn-channel p-channeltechnology MOSFETs to provideVDS (V) = 30V -30Vexcellent RDS(ON) and low gate charge.ID = 6.9A (VGS=10V) -6A (VGS=-10V)The complementary MOSFETs may beRDS(ON) RDS(ON)used in inverter and other applications. A

 9.3. Size:2601K  kexin
 ao4606.pdf

AO4604 AO4604

SMD Type MOSFETComplementary Trench MOSFET AO4606 (KO4606)SOP-8 Features N-ChannelVDS=30V ID=6ARDS(ON) 30m (VGS = 10V)RDS(ON) 42m (VGS = 4.5V)1.50 0.15 P-ChannelVDS=-30V ID=-6.5ARDS(ON) 28m (VGS =-10V)1 Source2 8 Drain2RDS(ON) 44m (VGS =-4.5V)7 Drain22 Gate26 Drain13 Source15 Drain14 Gate1D2 D1G2 G1S2 S1N-chann

 9.4. Size:1436K  kexin
 ao4600.pdf

AO4604 AO4604

SMD Type MOSFETComplementary Trench MOSFET AO4600 (KO4600)SOP-8 Unit:mm Features N-Channel : VDS (V) = 30VID = 6.9 A (VGS = 10V)1.50 0.15RDS(ON) 27m (VGS = 10V)RDS(ON) 32m (VGS = 4.5V)1 S2 5 D1 RDS(ON) 50m (VGS = 2.5V)6 D12 G27 D23 S1 P-Channel : 8 D24 G1 VDS (V) = -30VID = -5 A (VGS = -10V)RDS(ON) 49m (VGS = -10V)

 9.5. Size:1733K  kexin
 ao4609.pdf

AO4604 AO4604

SMD Type MOSFETComplementary Trench MOSFET AO4609 (KO4609)SOP-8 Unit:mm Features N-Channel : VDS (V) = 30VID = 8.5 A (VGS = 10V)1.50 0.15RDS(ON) 18m (VGS = 10V)RDS(ON) 28m (VGS = 4.5V)1 S2 5 D1 P-Channel : 6 D12 G27 D2 VDS (V) = -30V 3 S18 D24 G1ID = -3 A (VGS = -10V)RDS(ON) 130m (VGS = -10V)RDS(ON) 180m (VGS = -4.5V

 9.6. Size:964K  cn vbsemi
 ao4602.pdf

AO4604 AO4604

AO4602www.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS =

 9.7. Size:963K  cn vbsemi
 ao4606a.pdf

AO4604 AO4604

AO4606Awww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FQI19N20CTU

 

 
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