AO4912 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SMD Type MOSFETDual N-Channel MOSFETAO4912 (KO4912)SOP-8 Unit:mm FeaturesN-Channel 1 VDS (V) = 30V ID = 8.5 A (VGS = 10V)1.50 0.15 RDS(ON) 17m (VGS = 10V) RDS(ON) 25m (VGS = 4.5V)1 D2 5 D1/S2/K2 D2 6 D1/S2/K VDS (V) = 30V, IF = 3A, VF

AO491630V Dual N-Channel MOSFET with Schottky DiodeGeneral Description Product SummaryThe AO4916 uses advanced trench technology to provideQ1(N-Channel) Q2(N-Channel)excellent RDS(ON) and low gate charge. The two MOSFETsVDS= 30V 30Vmake a compact and efficient switch and synchronous ID= 8A (VGS=10V) 8A (VGS=10V)rectifier combination for use in DC-DC converters. A RDS(ON)

AO491430V Dual N-Channel MOSFET with Schottky DiodeGeneral Description Product SummaryThe AO4914 uses advanced trench technology to provideQ1(N-Channel) Q2(N-Channel)excellent RDS(ON) and low gate charge. The two MOSFETsVDS= 30V 30Vmake a compact and efficient switch and synchronous ID= 8A (VGS=10V) 8A (VGS=10V)rectifier combination for use in DC-DC converters. A RDS(ON)

Rev 3: Nov 2004AO4916, AO4916L( Green Product )Dual N-Channel Enhancement Mode Field Effect Transistorwith Schottky DiodeGeneral Description FeaturesVDS (V) = 30VThe AO4916 uses advanced trench technology to ID = 8.5Aprovide excellent R DS(ON) and low gate charge. The RDS(ON)

SMD Type MOSFETDual N-Channel MOSFETAO4914 (KO4914)SOP-8 Unit:mm FeaturesN-Channel 1 VDS (V) = 30V1.50 0.15 ID = 8 A (VGS = 10V) RDS(ON) 20.5m (VGS = 10V)1 S1/A 5 D2 RDS(ON) 28m (VGS = 4.5V)2 G1 6 D27 D1/K VDS (V) = 30V, IF = 3A, VF

SMD Type MOSFETDual N-Channel MOSFETAO4918 (KO4918)SOP-8 Unit:mm FeaturesN-Channel 1 VDS (V) = 30V ID = 9.3 A (VGS = 10V)1.50 0.15 RDS(ON) 14.5m (VGS = 10V) RDS(ON) 16m (VGS = 4.5V)1 D2 5 D1/S2/K VDS (V) = 30V, IF = 3A, VF