AO4912 PDF and Equivalents Search

 

AO4912 Specs and Replacement

Type Designator: AO4912

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.4 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: SOP8

AO4912 substitution

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AO4912 datasheet

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AO4912

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AO4912

AO4916 30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary The AO4916 uses advanced trench technology to provide Q1(N-Channel) Q2(N-Channel) excellent RDS(ON) and low gate charge. The two MOSFETs VDS= 30V 30V make a compact and efficient switch and synchronous ID= 8A (VGS=10V) 8A (VGS=10V) rectifier combination for use in DC-DC converters. A RDS(ON) ... See More ⇒

 9.2. Size:650K  aosemi
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AO4912

AO4914 30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary The AO4914 uses advanced trench technology to provide Q1(N-Channel) Q2(N-Channel) excellent RDS(ON) and low gate charge. The two MOSFETs VDS= 30V 30V make a compact and efficient switch and synchronous ID= 8A (VGS=10V) 8A (VGS=10V) rectifier combination for use in DC-DC converters. A RDS(ON) ... See More ⇒

 9.3. Size:370K  aosemi
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AO4912

Rev 3 Nov 2004 AO4916, AO4916L( Green Product ) Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS (V) = 30V The AO4916 uses advanced trench technology to ID = 8.5A provide excellent R DS(ON) and low gate charge. The RDS(ON) ... See More ⇒

Detailed specifications: SI5513CD , SIA517DJ , SI4953ADY , SI1903DL , SI4953DY , AO4824L , AO4900 , AO4906 , 4435 , AO4918 , AO6804 , KI8205A , KI8205T , KI8810DY , KI8810T , KI9926A , KX4N03W .

Keywords - AO4912 MOSFET specs

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