All MOSFET. AO4912 Datasheet

 

AO4912 Datasheet and Replacement


   Type Designator: AO4912
   Marking Code: 4912
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 9.36 nC
   tr ⓘ - Rise Time: 4.4 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: SOP8
 

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AO4912 Datasheet (PDF)

 ..1. Size:2359K  kexin
ao4912.pdf pdf_icon

AO4912

SMD Type MOSFETDual N-Channel MOSFETAO4912 (KO4912)SOP-8 Unit:mm FeaturesN-Channel 1 VDS (V) = 30V ID = 8.5 A (VGS = 10V)1.50 0.15 RDS(ON) 17m (VGS = 10V) RDS(ON) 25m (VGS = 4.5V)1 D2 5 D1/S2/K2 D2 6 D1/S2/K VDS (V) = 30V, IF = 3A, VF

 9.1. Size:651K  aosemi
ao4916.pdf pdf_icon

AO4912

AO491630V Dual N-Channel MOSFET with Schottky DiodeGeneral Description Product SummaryThe AO4916 uses advanced trench technology to provideQ1(N-Channel) Q2(N-Channel)excellent RDS(ON) and low gate charge. The two MOSFETsVDS= 30V 30Vmake a compact and efficient switch and synchronous ID= 8A (VGS=10V) 8A (VGS=10V)rectifier combination for use in DC-DC converters. A RDS(ON)

 9.2. Size:650K  aosemi
ao4914.pdf pdf_icon

AO4912

AO491430V Dual N-Channel MOSFET with Schottky DiodeGeneral Description Product SummaryThe AO4914 uses advanced trench technology to provideQ1(N-Channel) Q2(N-Channel)excellent RDS(ON) and low gate charge. The two MOSFETsVDS= 30V 30Vmake a compact and efficient switch and synchronous ID= 8A (VGS=10V) 8A (VGS=10V)rectifier combination for use in DC-DC converters. A RDS(ON)

 9.3. Size:370K  aosemi
ao4916l.pdf pdf_icon

AO4912

Rev 3: Nov 2004AO4916, AO4916L( Green Product )Dual N-Channel Enhancement Mode Field Effect Transistorwith Schottky DiodeGeneral Description FeaturesVDS (V) = 30VThe AO4916 uses advanced trench technology to ID = 8.5Aprovide excellent R DS(ON) and low gate charge. The RDS(ON)

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

Keywords - AO4912 MOSFET datasheet

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