IRF644A Todos los transistores

 ..1. Size:935K  samsung
 irf644a.pdf

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Lower RDS(ON) 0.214 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

 8.1. Size:219K  international rectifier
 irf644s.pdf

 8.2. Size:2262K  international rectifier
 irf644spbf.pdf

PD - 95116 IRF644SPbF Lead-Free 3/16/04 Document Number 91040 www.vishay.com 1 IRF644SPbF Document Number 91040 www.vishay.com 2 IRF644SPbF Document Number 91040 www.vishay.com 3 IRF644SPbF Document Number 91040 www.vishay.com 4 IRF644SPbF Document Number 91040 www.vishay.com 5 IRF644SPbF Document Number 91040 www.vishay.com 6 IRF644SPbF D2Pak Package Outli

 8.3. Size:919K  international rectifier
 irf644.pdf

PD - 94871 IRF644PbF Lead-Free 12/5/03 Document Number 91039 www.vishay.com 1 IRF644PbF Document Number 91039 www.vishay.com 2 IRF644PbF Document Number 91039 www.vishay.com 3 IRF644PbF Document Number 91039 www.vishay.com 4 IRF644PbF Document Number 91039 www.vishay.com 5 IRF644PbF Document Number 91039 www.vishay.com 6 IRF644PbF TO-220AB Package Outline

 8.4. Size:506K  international rectifier
 irf644 irf645.pdf

 8.5. Size:291K  international rectifier
 irf644n.pdf

PD - 94859 IRF644NPbF IRF644NS l Advanced Process Technology IRF644NL l Dynamic dv/dt Rating l 175 C Operating Temperature HEXFET Power MOSFET l Fast Switching D l Fully Avalanche Rated VDSS = 250V l Ease of Paralleling l Simple Drive Requirements l Lead-Free (only the TO-220AB RDS(on) = 240m version is currently available in a G lead-free configuration) Description ID =

 8.6. Size:900K  fairchild semi
 irf644b irfs644b.pdf

 8.7. Size:644K  fairchild semi
 irf644b.pdf

December 2013 IRF644B N-Channel BFET MOSFET 250 V, 14 A, 280 m Description Features These N-Channel enhancement mode power field effect 14 A, 250 V, RDS(on) = 280 m @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge (Typ. 47 nC) planar, DMOS technology. This advanced technology has Low Crss (Typ. 30 pF) been especially tailored to mi

 8.8. Size:202K  vishay
 irf644 sihf644.pdf

IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.28 RoHS* Fast Switching Qg (Max.) (nC) 68 COMPLIANT Ease of Paralleling Qgs (nC) 11 Qgd (nC) 35 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DES

 8.9. Size:124K  vishay
 irf644npbf irf644ns irf644nspbf irf644n irf644nlpbf.pdf

IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 V Available Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.240 RoHS* 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 54 Fast Switching Qgs (nC) 9.2 Fully Avalanche Rated Ease of Paralleling Qgd

 8.10. Size:167K  vishay
 irf644s sihf644s.pdf

IRF644S, SiHF644S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Surface Mount RDS(on) ( )VGS = 10 V 0.28 Available in Tape and Reel Qg (Max.) (nC) 68 Dynamic dV/dt Rating Qgs (nC) 11 Repetitive Avalanche Rated Fast Switching Qgd (nC) 35 Ease of Paralleling Configuration Sing

 8.11. Size:202K  vishay
 irf644pbf sihf644.pdf

IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.28 RoHS* Fast Switching Qg (Max.) (nC) 68 COMPLIANT Ease of Paralleling Qgs (nC) 11 Qgd (nC) 35 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DES

 8.12. Size:193K  vishay
 irf644spbf sihf644s.pdf

IRF644S, SiHF644S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Surface Mount RDS(on) ( )VGS = 10 V 0.28 Available in Tape and Reel Qg (Max.) (nC) 68 Dynamic dV/dt Rating Qgs (nC) 11 Repetitive Avalanche Rated Fast Switching Qgd (nC) 35 Ease of Paralleling Configuration Sing