All MOSFET. IRF644A Datasheet

 

IRF644A MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF644A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 46 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO220

 IRF644A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF644A Datasheet (PDF)

 ..1. Size:935K  samsung
irf644a.pdf

IRF644A
IRF644A

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 0.214 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

 8.1. Size:219K  international rectifier
irf644s.pdf

IRF644A
IRF644A

 8.2. Size:2262K  international rectifier
irf644spbf.pdf

IRF644A
IRF644A

PD - 95116IRF644SPbF Lead-Free3/16/04Document Number: 91040 www.vishay.com1IRF644SPbFDocument Number: 91040 www.vishay.com2IRF644SPbFDocument Number: 91040 www.vishay.com3IRF644SPbFDocument Number: 91040 www.vishay.com4IRF644SPbFDocument Number: 91040 www.vishay.com5IRF644SPbFDocument Number: 91040 www.vishay.com6IRF644SPbFD2Pak Package Outli

 8.3. Size:919K  international rectifier
irf644.pdf

IRF644A
IRF644A

PD - 94871IRF644PbF Lead-Free12/5/03Document Number: 91039 www.vishay.com1IRF644PbFDocument Number: 91039 www.vishay.com2IRF644PbFDocument Number: 91039 www.vishay.com3IRF644PbFDocument Number: 91039 www.vishay.com4IRF644PbFDocument Number: 91039 www.vishay.com5IRF644PbFDocument Number: 91039 www.vishay.com6IRF644PbFTO-220AB Package Outline

 8.4. Size:506K  international rectifier
irf644 irf645.pdf

IRF644A
IRF644A

 8.5. Size:291K  international rectifier
irf644n.pdf

IRF644A
IRF644A

PD - 94859IRF644NPbFIRF644NSl Advanced Process TechnologyIRF644NLl Dynamic dv/dt Ratingl 175C Operating Temperature HEXFET Power MOSFETl Fast SwitchingDl Fully Avalanche RatedVDSS = 250Vl Ease of Parallelingl Simple Drive Requirementsl Lead-Free (only the TO-220ABRDS(on) = 240mversion is currently available in aGlead-free configuration)Description ID =

 8.6. Size:900K  fairchild semi
irf644b irfs644b.pdf

IRF644A
IRF644A

November 2001IRF644B/IRFS644B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC)planar, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored to

 8.7. Size:644K  fairchild semi
irf644b.pdf

IRF644A
IRF644A

December 2013IRF644BN-Channel BFET MOSFET250 V, 14 A, 280 mDescription FeaturesThese N-Channel enhancement mode power field effect 14 A, 250 V, RDS(on) = 280 m @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge (Typ. 47 nC)planar, DMOS technology. This advanced technology has Low Crss (Typ. 30 pF)been especially tailored to mi

 8.8. Size:202K  vishay
irf644 sihf644.pdf

IRF644A
IRF644A

IRF644, SiHF644Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.28RoHS* Fast SwitchingQg (Max.) (nC) 68 COMPLIANT Ease of ParallelingQgs (nC) 11Qgd (nC) 35 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES

 8.9. Size:124K  vishay
irf644npbf irf644ns irf644nspbf irf644n irf644nlpbf.pdf

IRF644A
IRF644A

IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 VAvailable Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.240RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 54 Fast SwitchingQgs (nC) 9.2 Fully Avalanche Rated Ease of ParallelingQgd

 8.10. Size:167K  vishay
irf644s sihf644s.pdf

IRF644A
IRF644A

IRF644S, SiHF644SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 250 Surface MountRDS(on) ()VGS = 10 V 0.28 Available in Tape and Reel Qg (Max.) (nC) 68 Dynamic dV/dt RatingQgs (nC) 11 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 35 Ease of ParallelingConfiguration Sing

 8.11. Size:202K  vishay
irf644pbf sihf644.pdf

IRF644A
IRF644A

IRF644, SiHF644Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.28RoHS* Fast SwitchingQg (Max.) (nC) 68 COMPLIANT Ease of ParallelingQgs (nC) 11Qgd (nC) 35 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES

 8.12. Size:193K  vishay
irf644spbf sihf644s.pdf

IRF644A
IRF644A

IRF644S, SiHF644SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 250 Surface MountRDS(on) ()VGS = 10 V 0.28 Available in Tape and Reel Qg (Max.) (nC) 68 Dynamic dV/dt RatingQgs (nC) 11 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 35 Ease of ParallelingConfiguration Sing

Datasheet: IRF640A , IRF640FI , IRF640L , IRF640S , IRF641 , IRF642 , IRF643 , IRF644 , 8205A , IRF644S , IRF645 , IRF646 , IRF650A , IRF654A , IRF710 , IRF710A , IRF710S .

 

 
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