NTR4101P Todos los transistores

NTR4101P Trench Power MOSFET -20 V, Single P-Channel, SOT-23 Features Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drive http //onsemi.com http //onsemi.com SOT-23 Surface Mount for Small Footprint Pb-Free Package is Available V(BR)DSS RDS(ON) TYP ID MAX Applications 70 mW @ -4.5 V -20 V Load/Power Management for Portables 90 mW @ -2.5

NTR4101P, NTRV4101P Trench Power MOSFET -20 V, Single P-Channel, SOT-23 Features Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drive www.onsemi.com www.onsemi.com SOT-23 Surface Mount for Small Footprint NTRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 V(BR)DSS RDS(ON) TYP ID MAX

Product specification NTR4101P, NTRV4101P Trench Power MOSFET V(BR)DSS RDS(ON) TYP ID MAX -20 V, Single P-Channel, SOT-23 70 mW @ -4.5 V Features -20 V 90 mW @ -2.5 V -3.2 A Leading -20 V Trench for Low RDS(on) 112 mW @ -1.8 V -1.8 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint P-Channel MOSFET NTRV Prefix for Automotive and Other Applic

SMD Type MOSFET P-Channel MOSFET NTR4101P (KTR4101P) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-20V ID =-3.2 A 1 2 RDS(ON) 85m (VGS =-4.5V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) 120m (VGS =-2.5V) RDS(ON) 210m (VGS =-1.8V) S 1. Gate 2. Source 3. Drain G D Absolute Maximum Ratings Ta =

NTR4101P, NTRV4101P Trench Power MOSFET -20 V, Single P-Channel, SOT-23 Features Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drive http //onsemi.com http //onsemi.com SOT-23 Surface Mount for Small Footprint AEC Q101 Qualified - NTRV4101P These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) TYP ID MAX Applications 70 mW @

SMD Type MOSFET P-Channel MOSFET NTR4101P (KTR4101P) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-20V ID =-3.2 A 1 2 RDS(ON) 85m (VGS =-4.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 RDS(ON) 120m (VGS =-2.5V) 1.9 -0.2 RDS(ON) 210m (VGS =-1.8V) S 1. Gate 2. Source 3. Drain G D Absolute Maximum Rating

NTR4171P Power MOSFET -30 V, -3.5 A, Single P-Channel, SOT-23 Features Low RDS(on) at Low Gate Voltage Low Threshold Voltage http //onsemi.com High Power and Current Handling Capability This is a Pb-Free Device V(BR)DSS RDS(on) MAX ID MAX 75 mW @ -10 V -2.2 A Applications Load Switch -30 V 110 mW @ -4.5 V -1.8 A Optimized for Battery and Load Management Appli

NTR4170N Power MOSFET 30 V, 3.2 A, Single N-Channel, SOT-23 Features Low RDS(on) Low Gate Charge http //onsemi.com Low Threshold Voltage Halide Free V(BR)DSS RDS(on) MAX ID MAX This is a Pb-Free Device 55 mW @ 10 V 3.2 A Applications 30 V 70 mW @ 4.5 V 2.8 A Power Converters for Portables 110 mW @ 2.5 V 2.0 A Battery Management Load/Power Switch S

Product specification NTR4171P Power MOSFET V(BR)DSS RDS(on) MAX ID MAX -30 V, -3.5 A, Single P-Channel, SOT-23 75 mW @ -10 V -2.2 A -30 V 110 mW @ -4.5 V -1.8 A Features Low RDS(on) at Low Gate Voltage 150 mW @ -2.5 V -1.0 A Low Threshold Voltage High Power and Current Handling Capability P-CHANNEL MOSFET This is a Pb-Free Device S Applications Load Switch

NTR4171PT1G www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT

NTR4170NT1G www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)