NTR4101P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTR4101P
   Código: TR4
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 2.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   Qgⓘ - Carga de la puerta: 7.5 nC
   trⓘ - Tiempo de subida: 12.6 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET NTR4101P

NTR4101P Datasheet (PDF)

..1. Size:108K onsemi
ntr4101p.pdf

NTR4101PTrench Power MOSFET-20 V, Single P-Channel, SOT-23Features Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drivehttp://onsemi.comhttp://onsemi.com SOT-23 Surface Mount for Small Footprint Pb-Free Package is AvailableV(BR)DSS RDS(ON) TYP ID MAXApplications70 mW @ -4.5 V-20 V Load/Power Management for Portables 90 mW @ -2.5

..2. Size:78K onsemi
ntr4101p ntrv4101p.pdf

NTR4101P, NTRV4101PTrench Power MOSFET-20 V, Single P-Channel, SOT-23Features Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drivewww.onsemi.comwww.onsemi.com SOT-23 Surface Mount for Small Footprint NTRV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101V(BR)DSS RDS(ON) TYP ID MAX

..3. Size:120K tysemi
ntr4101p ntrv4101p.pdf

Product specificationNTR4101P, NTRV4101PTrench Power MOSFETV(BR)DSS RDS(ON) TYP ID MAX-20 V, Single P-Channel, SOT-2370 mW @ -4.5 VFeatures-20 V 90 mW @ -2.5 V -3.2 A Leading -20 V Trench for Low RDS(on)112 mW @ -1.8 V -1.8 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small FootprintP-Channel MOSFET NTRV Prefix for Automotive and Other Applic

..4. Size:1721K kexin
ntr4101p.pdf

SMD Type MOSFETP-Channel MOSFETNTR4101P (KTR4101P)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-3.2 A1 2 RDS(ON) 85m (VGS =-4.5V)+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 RDS(ON) 120m (VGS =-2.5V) RDS(ON) 210m (VGS =-1.8V)S1. Gate2. Source3. DrainGD Absolute Maximum Ratings Ta =

0.1. Size:156K onsemi
ntr4101pt1g.pdf

NTR4101P, NTRV4101PTrench Power MOSFET-20 V, Single P-Channel, SOT-23Features Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drivehttp://onsemi.comhttp://onsemi.com SOT-23 Surface Mount for Small Footprint AEC Q101 Qualified - NTRV4101P These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) TYP ID MAXApplications70 mW @

0.2. Size:1732K kexin
ntr4101p-3.pdf

SMD Type MOSFETP-Channel MOSFETNTR4101P (KTR4101P)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-3.2 A1 2 RDS(ON) 85m (VGS =-4.5V)+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 120m (VGS =-2.5V) 1.9 -0.2 RDS(ON) 210m (VGS =-1.8V)S1. Gate2. Source3. DrainGD Absolute Maximum Rating

9.1. Size:134K onsemi
ntr4171p.pdf

NTR4171PPower MOSFET-30 V, -3.5 A, Single P-Channel, SOT-23Features Low RDS(on) at Low Gate Voltage Low Threshold Voltagehttp://onsemi.com High Power and Current Handling Capability This is a Pb-Free Device V(BR)DSS RDS(on) MAX ID MAX75 mW @ -10 V -2.2 AApplications Load Switch -30 V 110 mW @ -4.5 V -1.8 A Optimized for Battery and Load Management Appli

9.2. Size:100K onsemi
ntr4170n.pdf

NTR4170NPower MOSFET30 V, 3.2 A, Single N-Channel, SOT-23Features Low RDS(on) Low Gate Chargehttp://onsemi.com Low Threshold Voltage Halide Free V(BR)DSS RDS(on) MAX ID MAX This is a Pb-Free Device55 mW @ 10 V 3.2 AApplications 30 V 70 mW @ 4.5 V 2.8 A Power Converters for Portables110 mW @ 2.5 V 2.0 A Battery Management Load/Power SwitchS

9.3. Size:133K tysemi
ntr4171p ntr4171pt1g.pdf

Product specificationNTR4171PPower MOSFETV(BR)DSS RDS(on) MAX ID MAX-30 V, -3.5 A, Single P-Channel, SOT-2375 mW @ -10 V -2.2 A-30 V 110 mW @ -4.5 V -1.8 AFeatures Low RDS(on) at Low Gate Voltage150 mW @ -2.5 V -1.0 A Low Threshold Voltage High Power and Current Handling CapabilityP-CHANNEL MOSFET This is a Pb-Free DeviceSApplications Load Switch

9.4. Size:97K tysemi
ntr4170n ntr4170nt1g.pdf

Product specificationNTR4170NPower MOSFETV(BR)DSS RDS(on) MAX ID MAX30 V, 3.2 A, Single N-Channel, SOT-2355 mW @ 10 V 3.2 A30 V 70 mW @ 4.5 V 2.8 AFeatures Low RDS(on)110 mW @ 2.5 V 2.0 A Low Gate ChargeSIMPLIFIED SCHEMATIC - N-CHANNEL Low Threshold Voltage Halide FreeD This is a Pb-Free DeviceApplications Power Converters for PortablesG

9.5. Size:791K cn vbsemi
ntr4171pt1g.pdf

NTR4171PT1Gwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT

9.6. Size:849K cn vbsemi
ntr4170nt1g.pdf

NTR4170NT1Gwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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