NTR4101P MOSFET. Datasheet pdf. Equivalent
Type Designator: NTR4101P
Marking Code: TR4
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 2.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7.5 nC
trⓘ - Rise Time: 12.6 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: SOT23
NTR4101P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTR4101P Datasheet (PDF)
ntr4101p.pdf
NTR4101PTrench Power MOSFET-20 V, Single P-Channel, SOT-23Features Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drivehttp://onsemi.comhttp://onsemi.com SOT-23 Surface Mount for Small Footprint Pb-Free Package is AvailableV(BR)DSS RDS(ON) TYP ID MAXApplications70 mW @ -4.5 V-20 V Load/Power Management for Portables 90 mW @ -2.5
ntr4101p ntrv4101p.pdf
NTR4101P, NTRV4101PTrench Power MOSFET-20 V, Single P-Channel, SOT-23Features Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drivewww.onsemi.comwww.onsemi.com SOT-23 Surface Mount for Small Footprint NTRV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101V(BR)DSS RDS(ON) TYP ID MAX
ntr4101p ntrv4101p.pdf
Product specificationNTR4101P, NTRV4101PTrench Power MOSFETV(BR)DSS RDS(ON) TYP ID MAX-20 V, Single P-Channel, SOT-2370 mW @ -4.5 VFeatures-20 V 90 mW @ -2.5 V -3.2 A Leading -20 V Trench for Low RDS(on)112 mW @ -1.8 V -1.8 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small FootprintP-Channel MOSFET NTRV Prefix for Automotive and Other Applic
ntr4101p.pdf
SMD Type MOSFETP-Channel MOSFETNTR4101P (KTR4101P)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-3.2 A1 2 RDS(ON) 85m (VGS =-4.5V)+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 RDS(ON) 120m (VGS =-2.5V) RDS(ON) 210m (VGS =-1.8V)S1. Gate2. Source3. DrainGD Absolute Maximum Ratings Ta =
ntr4101pt1g.pdf
NTR4101P, NTRV4101PTrench Power MOSFET-20 V, Single P-Channel, SOT-23Features Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drivehttp://onsemi.comhttp://onsemi.com SOT-23 Surface Mount for Small Footprint AEC Q101 Qualified - NTRV4101P These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) TYP ID MAXApplications70 mW @
ntr4101p-3.pdf
SMD Type MOSFETP-Channel MOSFETNTR4101P (KTR4101P)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-3.2 A1 2 RDS(ON) 85m (VGS =-4.5V)+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 120m (VGS =-2.5V) 1.9 -0.2 RDS(ON) 210m (VGS =-1.8V)S1. Gate2. Source3. DrainGD Absolute Maximum Rating
ntr4171p.pdf
NTR4171PPower MOSFET-30 V, -3.5 A, Single P-Channel, SOT-23Features Low RDS(on) at Low Gate Voltage Low Threshold Voltagehttp://onsemi.com High Power and Current Handling Capability This is a Pb-Free Device V(BR)DSS RDS(on) MAX ID MAX75 mW @ -10 V -2.2 AApplications Load Switch -30 V 110 mW @ -4.5 V -1.8 A Optimized for Battery and Load Management Appli
ntr4170n.pdf
NTR4170NPower MOSFET30 V, 3.2 A, Single N-Channel, SOT-23Features Low RDS(on) Low Gate Chargehttp://onsemi.com Low Threshold Voltage Halide Free V(BR)DSS RDS(on) MAX ID MAX This is a Pb-Free Device55 mW @ 10 V 3.2 AApplications 30 V 70 mW @ 4.5 V 2.8 A Power Converters for Portables110 mW @ 2.5 V 2.0 A Battery Management Load/Power SwitchS
ntr4171p ntr4171pt1g.pdf
Product specificationNTR4171PPower MOSFETV(BR)DSS RDS(on) MAX ID MAX-30 V, -3.5 A, Single P-Channel, SOT-2375 mW @ -10 V -2.2 A-30 V 110 mW @ -4.5 V -1.8 AFeatures Low RDS(on) at Low Gate Voltage150 mW @ -2.5 V -1.0 A Low Threshold Voltage High Power and Current Handling CapabilityP-CHANNEL MOSFET This is a Pb-Free DeviceSApplications Load Switch
ntr4170n ntr4170nt1g.pdf
Product specificationNTR4170NPower MOSFETV(BR)DSS RDS(on) MAX ID MAX30 V, 3.2 A, Single N-Channel, SOT-2355 mW @ 10 V 3.2 A30 V 70 mW @ 4.5 V 2.8 AFeatures Low RDS(on)110 mW @ 2.5 V 2.0 A Low Gate ChargeSIMPLIFIED SCHEMATIC - N-CHANNEL Low Threshold Voltage Halide FreeD This is a Pb-Free DeviceApplications Power Converters for PortablesG
ntr4171pt1g.pdf
NTR4171PT1Gwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT
ntr4170nt1g.pdf
NTR4170NT1Gwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: BRCS20P03IP | WNMD2166 | 2SK1629-E1-E
History: BRCS20P03IP | WNMD2166 | 2SK1629-E1-E
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