SI2307DS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI2307DS
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 126 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.064 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET SI2307DS

SI2307DS Datasheet (PDF)

..1. Size:76K vishay
si2307ds.pdf

Si2307DSVishay SiliconixP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.080 @ VGS = 10 V 330300.140 @ VGS = 4.5 V 2TO-236(SOT-23)G 13 DS 2Top ViewSi2307DS (A7)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLSS OTHERWISE NOTED) Parameter Symbol Limit UnitDrain-Source Voltage VDS 30VVGate-Source Voltage VG

..2. Size:1474K kexin
si2307ds.pdf

SMD Type MOSFETP-Channel Enhancement MOSFET SI2307DS (KI2307DS)SOT-23Unit: mm+0.12.9-0.1+0.1 Features 0.4 -0.13 VDS (V) =-30V ID =-3.0A (VGS =-10V) RDS(ON) 80m (VGS =-10V)1 2 RDS(ON) 140m (VGS =-4.5V)+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Param

..3. Size:1508K kexin
si2307ds ki2307ds.pdf

SMD Type MOSFETP-Channel Enhancement MOSFET SI2307DS (KI2307DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.1 Features3 VDS (V) =-30V ID =-3.0A (VGS =-10V) RDS(ON) 80m (VGS =-10V)1 2+0.02+0.1 RDS(ON) 140m (VGS =-4.5V)0.15 -0.020.95-0.1+0.11.9-0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25

0.1. Size:1508K kexin
si2307ds-3.pdf

8.1. Size:201K vishay
si2307cd.pdf

New ProductSi2307CDSVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)a, b Qg (Typ.) TrenchFET Power MOSFET0.088 at VGS = - 10 V - 2.7- 30 4.1 nCRoHS0.138 at VGS = - 4.5 V - 2.2COMPLIANTAPPLICATIONS Load Switch for Portable DevicesTO-236(SOT-23)G 13 DSS 2GTop Vi

8.2. Size:204K vishay
si2307cds.pdf

8.3. Size:185K vishay
si2307bds.pdf

Si2307BDSVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)b TrenchFET Power MOSFET 0.078 at VGS = - 10 V - 3.2- 30 RoHS0.130 at VGS = - 4.5 V - 2.5COMPLIANTTO-236(SOT-23)G 13 DS 2Top ViewSi2307BDS (L7)** Marking CodeOrdering Information: Si2307BDS-T1-E3 (Lead (Pb)-fr

8.4. Size:936K mcc
si2307.pdf

SI2307Features TrenchFET Power MOSFET Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"P-Channel MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings Operating Junction Temperature Range: -55C to +150C Sto

8.5. Size:593K shenzhen
si2307.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2307P-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.060 @ VGS = 10 V 4.130300.090 @ VGS = 4.5 V 3.0TO-236(SOT-23)G 13 DS 2Top ViewSi2307 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLSS OTHERWISE NOTED) Parameter Symbol Limit UnitDrain-Source Voltage VDS 30VVGate-So

8.6. Size:1880K kexin
si2307bds.pdf

SMD Type MOSFETP-Channel Enhancement MOSFET SI2307BDS (KI2307BDS) FeaturesSOT-23Unit: mm+0.12.9 -0.1 VDS (V) =-30V+0.10.4 -0.1 RDS(ON) 78m (VGS =-10V) 3 RDS(ON) 130m (VGS =-4.5V)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Stead

8.7. Size:1919K kexin
si2307bds-3.pdf

SMD Type MOSFETP-Channel Enhancement MOSFET SI2307BDS (KI2307BDS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.1 Features 3 VDS (V) =-30V RDS(ON) 78m (VGS =-10V) RDS(ON) 130m (VGS =-4.5V)1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 2 2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec

8.8. Size:2072K umw-ic
si2307a.pdf

RUMWUMW SI2307AUMW SI2307AP-Channel Enhancement MOSFETSOT23 Features VDS (V) =-30V ID =-3.0A (VGS =-10V) RDS(ON) 80m (VGS =-10V)1. GATE RDS(ON) 140m (VGS =-4.5V) 2. SOURCE 3. DRAIN MarkingG 13 DA79TS 2 Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec UnitDrain-Source Voltage VDS -30VGate-Source Voltage V

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