SI2307DS Specs and Replacement
Type Designator: SI2307DS
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ -
Output Capacitance: 126 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
Package: SOT23
- MOSFET ⓘ Cross-Reference Search
SI2307DS datasheet
..1. Size:76K vishay
si2307ds.pdf 
Si2307DS Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.080 @ VGS = 10 V 3 30 30 0.140 @ VGS = 4.5 V 2 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2307DS (A7)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLSS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V V Gate-Source Voltage VG... See More ⇒
..2. Size:1474K kexin
si2307ds.pdf
SMD Type MOSFET P-Channel Enhancement MOSFET SI2307DS (KI2307DS) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 Features 0.4 -0.1 3 VDS (V) =-30V ID =-3.0A (VGS =-10V) RDS(ON) 80m (VGS =-10V) 1 2 RDS(ON) 140m (VGS =-4.5V) +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain Absolute Maximum Ratings Ta = 25 Param... See More ⇒
8.1. Size:201K vishay
si2307cd.pdf
New Product Si2307CDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( ) ID (A)a, b Qg (Typ.) TrenchFET Power MOSFET 0.088 at VGS = - 10 V - 2.7 - 30 4.1 nC RoHS 0.138 at VGS = - 4.5 V - 2.2 COMPLIANT APPLICATIONS Load Switch for Portable Devices TO-236 (SOT-23) G 1 3 D S S 2 G Top Vi... See More ⇒
8.2. Size:204K vishay
si2307cds.pdf
New Product Si2307CDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( ) ID (A)a, b Qg (Typ.) TrenchFET Power MOSFET 0.088 at VGS = - 10 V - 2.7 - 30 4.1 nC RoHS 0.138 at VGS = - 4.5 V - 2.2 COMPLIANT APPLICATIONS Load Switch for Portable Devices TO-236 (SOT-23) G 1 3 D S S 2 G Top Vi... See More ⇒
8.3. Size:185K vishay
si2307bds.pdf
Si2307BDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( ) ID (A)b TrenchFET Power MOSFET 0.078 at VGS = - 10 V - 3.2 - 30 RoHS 0.130 at VGS = - 4.5 V - 2.5 COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 Top View Si2307BDS (L7)* * Marking Code Ordering Information Si2307BDS-T1-E3 (Lead (Pb)-fr... See More ⇒
8.4. Size:936K mcc
si2307.pdf
SI2307 Features TrenchFET Power MOSFET Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" P-Channel MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range -55 C to +150 C Sto... See More ⇒
8.5. Size:593K shenzhen
si2307.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2307 P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.060 @ VGS = 10 V 4.1 30 30 0.090 @ VGS = 4.5 V 3.0 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2307 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLSS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V V Gate-So... See More ⇒
8.6. Size:1880K kexin
si2307bds.pdf
SMD Type MOSFET P-Channel Enhancement MOSFET SI2307BDS (KI2307BDS) Features SOT-23 Unit mm +0.1 2.9 -0.1 VDS (V) =-30V +0.1 0.4 -0.1 RDS(ON) 78m (VGS =-10V) 3 RDS(ON) 130m (VGS =-4.5V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Stead... See More ⇒
8.7. Size:1919K kexin
si2307bds-3.pdf
SMD Type MOSFET P-Channel Enhancement MOSFET SI2307BDS (KI2307BDS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-30V RDS(ON) 78m (VGS =-10V) RDS(ON) 130m (VGS =-4.5V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec... See More ⇒
8.8. Size:2072K umw-ic
si2307a.pdf
R UMW UMW SI2307A UMW SI2307A P-Channel Enhancement MOSFET SOT 23 Features VDS (V) =-30V ID =-3.0A (VGS =-10V) RDS(ON) 80m (VGS =-10V) 1. GATE RDS(ON) 140m (VGS =-4.5V) 2. SOURCE 3. DRAIN Marking G 1 3 D A79T S 2 Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage V... See More ⇒
Detailed specifications: NTMS10P02R2, NTR4101P, SI2301BDS, IXFP18N65X2, SI2303BDS, SI2303DS, SI2305DS, SI2307BDS, 50N06, SI2315BDS, SI2319DS, SI2321DS, SI2323DS, SI2325DS, SI2333CDS, SI2333DS, SI2335DS
Keywords - SI2307DS MOSFET specs
SI2307DS cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
