IRF710A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF710A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 36 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 15 nS
Cossⓘ - Capacitancia de salida: 35 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.6 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de IRF710A MOSFET
- Selecciónⓘ de transistores por parámetros
IRF710A datasheet
..1. Size:209K samsung
irf710a.pdf 
IRF710A Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 3.6 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current 10 A (Max.) @ VDS = 400V Low RDS(ON) 2.815 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha
8.1. Size:169K 1
irf7103q.pdf
PD - 93944C IRF7103Q AUTOMOTIVE MOSFET Typical Applications Anti-lock Braking Systems (ABS) HEXFET Power MOSFET Electronic Fuel Injection ) ) ) ) Power Doors, Windows & Seats VDSS RDS(on) max (m ) ID Benefits 50V 130@VGS = 10V 3.0A Advanced Process Technology 200@VGS = 4.5V 1.5A Dual N-Channel MOSFET Ultra Low On-Resistance 175 C Operating Temperature R
8.2. Size:402K 1
auirf7103q.pdf
AUTOMOTIVE GRADE AUIRF7103Q HEXFET Power MOSFET Features l Advanced Planar Technology l Dual N Channel MOSFET 1 8 l Low On-Resistance S1 D1 V(BR)DSS 50V 2 7 l Dynamic dV/dT Rating G1 D1 3 6 l 175 C Operating Temperature S2 D2 RDS(on) max. 130m 4 5 l Fast Switching G2 D2 l Lead-Free, RoHS Compliant ID Top View 3.0A l Automotive Qualified* Description Specifically d
8.3. Size:607K 1
irf7105q.pdf
PD - 96102B END OF LIFE IRF7105QPbF HEXFET Power MOSFET N-CHANNEL MOSFET l Advanced Process Technology 1 8 N-Ch P-Ch S1 D1 l Ultra Low On-Resistance 2 7 G1 D1 l Dual N and P Channel MOSFET VDSS 25V -25V l Surface Mount 3 6 S2 D2 l Available in Tape & Reel 4 5 RDS(on) 0.10 0.25 G2 D2 l 150 C Operating Temperature P-CHANNEL MOSFET l Lead-Free Top View ID 3.5A -2.3A
8.4. Size:158K international rectifier
irf7106.pdf
PD - 9.1098B IRF7106 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology N-CHANNEL MOSFET Ultra Low On-Resistance N-Ch P-Ch 1 8 S1 D1 Dual N and P Channel Mosfet 2 7 G1 D1 Surface Mount VDSS 20V -20V 3 6 Available in Tape & Reel S2 D2 Dynamic dv/dt Rating RDS(on) 0.125 0.20 4 5 G2 D2 Fast Switching P-CHANNEL MOSFET ID 3.0A -2.5A Top View Description Four
8.5. Size:158K international rectifier
irf7107.pdf
PD - 9.1099B IRF7107 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology N-CHANNEL MOSFET N-Ch P-Ch Ultra Low On-Resistance 1 8 S1 D1 Dual N and P Channel Mosfet 2 7 G1 D1 VDSS 20V -20V Surface Mount 3 6 Available in Tape & Reel S2 D2 RDS(on) 0.125 0.160 Dynamic dv/dt Rating 4 5 G2 D2 Fast Switching P-CHANNEL MOSFET ID 3.0A -2.8A Top View Description F
8.6. Size:609K international rectifier
irf7105pbf-1.pdf
IRF7105TRPbF-1 HEXFET Power MOSFET N-CHANNEL MOSFET 1 8 N-CH P-CH S1 D1 VDS 25 -25 V 2 7 G1 D1 RDS(on) max 3 6 0.1 0.25 S2 D2 (@V = 10V) GS 4 5 G2 D2 Qg (typical) 9.4 10 nC P-CHANNEL MOSFET ID 3.5 -2.3 A SO-8 Top View (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techn
8.7. Size:304K international rectifier
irf7103ipbf.pdf
PD -96085A IRF7103IPbF HEXFET Power MOSFET l Adavanced Process Technology 1 8 l Ultra Low On-Resistance S1 D1 VDSS = 50V 2 7 l Dual N-Channel MOSFET G1 D1 l Surface Mount 3 6 S2 D2 RDS(on) = 0.130 l Available in Tape & Reel 4 5 G2 D2 l Dynamic dv/dt Rating ID = 3.0A l Fast Switching Top View l Lead-Free Description The SO-8 has been modified through a customized lea
8.8. Size:303K international rectifier
irf7103pbf.pdf
PD -95037B IRF7103PbF HEXFET Power MOSFET l Adavanced Process Technology l Ultra Low On-Resistance 1 8 S1 D1 l Dual N-Channel MOSFET VDSS = 50V 2 7 G1 D1 l Surface Mount 3 6 l Available in Tape & Reel S2 D2 RDS(on) = 0.130 l Dynamic dv/dt Rating 4 5 G2 D2 l Fast Switching ID = 3.0A Top View l Lead-Free Description The SO-8 has been modified through a customized leadf
8.9. Size:1710K international rectifier
irf710spbf.pdf
PD- 95746 IRF710SPbF Lead-Free 8/23/04 Document Number 91042 www.vishay.com 1 IRF710SPbF Document Number 91042 www.vishay.com 2 IRF710SPbF Document Number 91042 www.vishay.com 3 IRF710SPbF Document Number 91042 www.vishay.com 4 IRF710SPbF Document Number 91042 www.vishay.com 5 IRF710SPbF Document Number 91042 www.vishay.com 6 IRF710SPbF Peak Diode Recovery
8.10. Size:169K international rectifier
irf7103q.pdf
PD - 93944C IRF7103Q AUTOMOTIVE MOSFET Typical Applications Anti-lock Braking Systems (ABS) HEXFET Power MOSFET Electronic Fuel Injection ) ) ) ) Power Doors, Windows & Seats VDSS RDS(on) max (m ) ID Benefits 50V 130@VGS = 10V 3.0A Advanced Process Technology 200@VGS = 4.5V 1.5A Dual N-Channel MOSFET Ultra Low On-Resistance 175 C Operating Temperature R
8.11. Size:263K international rectifier
irf7101.pdf
PD - 9.871B IRF7101 HEXFET Power MOSFET Adavanced Process Technology 1 8 Ultra Low On-Resistance D1 S1 VDSS = 20V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 RDS(on) = 0.10 Available in Tape & Reel 4 5 G2 D2 Dynamic dv/dt Rating ID = 3.5A Fast Switching Top View Description Fourth Generation HEXFETs from International Rectifier utilize advanced pro
8.12. Size:158K international rectifier
irf7104.pdf
PD - 9.1096B IRF7104 HEXFET Power MOSFET Adavanced Process Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -20V Dual P-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 RDS(on) = 0.250 Available in Tape & Reel 4 5 G2 D2 Dynamic dv/dt Rating ID = -2.3A Fast Switching Top View Description Fourth Generation HEXFETs from International Rectifier utilize advanced
8.14. Size:275K international rectifier
irf7103pbf-1.pdf
IRF7103PbF-1 HEXFET Power MOSFET VDS 50 V 1 8 S1 D1 RDS(on) max 0.13 2 7 G1 D1 (@V = 10V) GS 3 6 S2 D2 RDS(on) max 0.20 4 5 (@V = 4.5V) G2 D2 GS Qg (typical) 12 nC SO-8 Top View ID 3.0 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturin
8.15. Size:229K international rectifier
irf710pbf.pdf
PD - 95366 IRF710PbF Lead-Free www.irf.com 1 6/10/04 IRF710PbF 2 www.irf.com IRF710PbF www.irf.com 3 IRF710PbF 4 www.irf.com IRF710PbF www.irf.com 5 IRF710PbF 6 www.irf.com IRF710PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A -
8.16. Size:215K international rectifier
irf7104pbf.pdf
PD - 95254 IRF7104PbF HEXFET Power MOSFET l Adavanced Process Technology l Ultra Low On-Resistance 1 8 S1 D1 l Dual P-Channel MOSFET VDSS = -20V 2 7 G1 D1 l Surface Mount l Available in Tape & Reel 3 6 S2 D2 RDS(on) = 0.250 l Dynamic dv/dt Rating 4 5 G2 D2 l Fast Switching ID = -2.3A l Lead-Free Top View Description Fourth Generation HEXFETs from International Recti
8.17. Size:169K international rectifier
irf7103.pdf
PD - 9.1095B IRF7103 HEXFET Power MOSFET Adavanced Process Technology 1 8 Ultra Low On-Resistance D1 S1 VDSS = 50V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 RDS(on) = 0.130 Available in Tape & Reel 4 5 G2 D2 Dynamic dv/dt Rating ID = 3.0A Fast Switching Top View Description Fourth Generation HEXFETs from International Rectifier utilize advanced p
8.18. Size:224K international rectifier
irf7105.pdf
PD - 9.1097C IRF7105 HEXFET Power MOSFET Advanced Process Technology N-CHANNEL MOSFET 1 8 N-Ch P-Ch S1 D1 Ultra Low On-Resistance 2 7 Dual N and P Channel Mosfet G1 D1 VDSS 25V -25V Surface Mount 3 6 S2 D2 Available in Tape & Reel 4 5 RDS(on) 0.10 0.25 G2 D2 Dynamic dv/dt Rating P-CHANNEL MOSFET Fast Switching Top View ID 3.5A -2.3A Description Fourth Ge
8.19. Size:302K international rectifier
irf7105pbf.pdf
PD - 95164 IRF7105PbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance N-CHANNEL MOSFET 1 8 N-Ch P-Ch S1 D1 l Dual N and P Channel Mosfet 2 7 l Surface Mount G1 D1 VDSS 25V -25V l Available in Tape & Reel 3 6 S2 D2 l Dynamic dv/dt Rating 4 5 RDS(on) 0.10 0.25 G2 D2 l Fast Switching P-CHANNEL MOSFET l Lead-Free Top View ID 3.5A -2.3A
8.20. Size:165K international rectifier
irf710.pdf
8.21. Size:275K international rectifier
irf7101pbf.pdf
PD - 95162 IRF7101PbF HEXFET Power MOSFET l Adavanced Process Technology l Ultra Low On-Resistance 1 8 l Dual N-Channel MOSFET S1 D1 VDSS = 20V l Surface Mount 2 7 G1 D1 l Available in Tape & Reel 3 6 S2 D2 RDS(on) = 0.10 l Dynamic dv/dt Rating 4 5 G2 D2 l Fast Switching l Lead-Free ID = 3.5A Top View Description Fourth Generation HEXFETs from International Rectifi
8.23. Size:859K fairchild semi
irf710b.pdf
November 2001 IRF710B/IRFS710B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 7.7 nC) planar, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been especially tailored to
8.24. Size:198K vishay
irf710spbf sihf710s.pdf
IRF710S, SiHF710S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 400 Surface Mount RDS(on) ( )VGS = 10 V 3.6 Available in Tape and Reel Qg (Max.) (nC) 17 Dynamic dV/dt Rating Qgs (nC) 3.4 Repetitive Avalanche Rated Fast Switching Qgd (nC) 8.5 Ease of Paralleling Configuration Sin
8.25. Size:203K vishay
irf710 sihf710.pdf
IRF710, SiHF710 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.6 RoHS* Qg (Max.) (nC) 17 Fast Switching COMPLIANT Qgs (nC) 3.4 Ease of Paralleling Qgd (nC) 8.5 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D TO
8.27. Size:899K cn vbsemi
irf7103tr.pdf
IRF7103TR www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channe
8.28. Size:852K cn vbsemi
irf7101tr.pdf
IRF7101TR www.VBsemi.tw Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET 20 0.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2 5
8.29. Size:1286K cn vbsemi
irf7105trpbf.pdf
IRF7105TRPBF www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at
8.30. Size:234K inchange semiconductor
irf710.pdf
isc N-Channel Mosfet Transistor IRF710 FEATURES Low R DS(on) V Rated at 20V GS Silicon Gate for Fast Switching Speed Rugged Low Drive Requirements Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC mo
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