IRF710AAdvanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 3.6 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2 A Improved Gate Charge Extended Safe Operating AreaTO-220 Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 2.815 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

PD - 93944CIRF7103QAUTOMOTIVE MOSFETTypical Applications Anti-lock Braking Systems (ABS) HEXFET Power MOSFET Electronic Fuel Injection)))) Power Doors, Windows & Seats VDSS RDS(on) max (m) IDBenefits 50V 130@VGS = 10V 3.0A Advanced Process Technology200@VGS = 4.5V 1.5A Dual N-Channel MOSFET Ultra Low On-Resistance 175C Operating Temperature R

AUTOMOTIVE GRADEAUIRF7103QHEXFET Power MOSFETFeaturesl Advanced Planar Technologyl Dual N Channel MOSFET1 8l Low On-Resistance S1 D1V(BR)DSS50V2 7l Dynamic dV/dT Rating G1 D13 6l 175C Operating TemperatureS2 D2RDS(on) max.130m4 5l Fast SwitchingG2 D2l Lead-Free, RoHS CompliantIDTop View 3.0Al Automotive Qualified*DescriptionSpecifically d

PD - 96102BEND OF LIFEIRF7105QPbFHEXFET Power MOSFETN-CHANNEL MOSFETl Advanced Process Technology1 8 N-Ch P-ChS1 D1l Ultra Low On-Resistance2 7G1 D1l Dual N and P Channel MOSFETVDSS 25V -25Vl Surface Mount 3 6S2 D2l Available in Tape & Reel45RDS(on) 0.10 0.25G2 D2l 150C Operating TemperatureP-CHANNEL MOSFETl Lead-FreeTop ViewID 3.5A -2.3A

PD - 9.1098BIRF7106PRELIMINARYHEXFET Power MOSFETAdvanced Process TechnologyN-CHANNEL MOSFETUltra Low On-Resistance N-Ch P-Ch1 8S1 D1Dual N and P Channel Mosfet2 7G1 D1Surface Mount VDSS 20V -20V3 6Available in Tape & ReelS2 D2Dynamic dv/dt RatingRDS(on) 0.125 0.204 5G2 D2Fast SwitchingP-CHANNEL MOSFETID 3.0A -2.5ATop ViewDescriptionFour

PD - 9.1099BIRF7107PRELIMINARYHEXFET Power MOSFETAdvanced Process TechnologyN-CHANNEL MOSFETN-Ch P-ChUltra Low On-Resistance1 8S1 D1Dual N and P Channel Mosfet2 7G1 D1VDSS 20V -20VSurface Mount3 6Available in Tape & ReelS2 D2RDS(on) 0.125 0.160Dynamic dv/dt Rating4 5G2 D2Fast SwitchingP-CHANNEL MOSFETID 3.0A -2.8ATop ViewDescriptionF

IRF7105TRPbF-1HEXFET Power MOSFETN-CHANNEL MOSFET1 8N-CH P-CH S1 D1VDS 25 -25 V 2 7G1 D1RDS(on) max 3 60.1 0.25 S2 D2(@V = 10V)GS45G2 D2Qg (typical) 9.4 10 nCP-CHANNEL MOSFETID 3.5 -2.3 A SO-8Top View(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techn

PD -96085AIRF7103IPbFHEXFET Power MOSFETl Adavanced Process Technology1 8l Ultra Low On-Resistance S1 D1VDSS = 50V2 7l Dual N-Channel MOSFETG1 D1l Surface Mount3 6S2 D2RDS(on) = 0.130l Available in Tape & Reel4 5G2 D2l Dynamic dv/dt RatingID = 3.0Al Fast SwitchingTop Viewl Lead-FreeDescriptionThe SO-8 has been modified through a customizedlea

PD- 95746IRF710SPbF Lead-Free8/23/04Document Number: 91042 www.vishay.com1IRF710SPbFDocument Number: 91042 www.vishay.com2IRF710SPbFDocument Number: 91042 www.vishay.com3IRF710SPbFDocument Number: 91042 www.vishay.com4IRF710SPbFDocument Number: 91042 www.vishay.com5IRF710SPbFDocument Number: 91042 www.vishay.com6IRF710SPbFPeak Diode Recovery

PD - 93944CIRF7103QAUTOMOTIVE MOSFETTypical Applications Anti-lock Braking Systems (ABS) HEXFET Power MOSFET Electronic Fuel Injection)))) Power Doors, Windows & Seats VDSS RDS(on) max (m) IDBenefits 50V 130@VGS = 10V 3.0A Advanced Process Technology200@VGS = 4.5V 1.5A Dual N-Channel MOSFET Ultra Low On-Resistance 175C Operating Temperature R

PD - 9.871BIRF7101HEXFET Power MOSFET Adavanced Process Technology1 8 Ultra Low On-Resistance D1S1VDSS = 20V Dual N-Channel MOSFET 2 7G1 D1 Surface Mount3 6S2 D2RDS(on) = 0.10 Available in Tape & Reel4 5G2 D2 Dynamic dv/dt RatingID = 3.5A Fast SwitchingTop ViewDescriptionFourth Generation HEXFETs from InternationalRectifier utilize advanced pro

PD - 9.1096BIRF7104HEXFET Power MOSFET Adavanced Process Technology1 8S1 D1 Ultra Low On-ResistanceVDSS = -20V Dual P-Channel MOSFET 2 7G1 D1 Surface Mount3 6S2 D2RDS(on) = 0.250 Available in Tape & Reel4 5G2 D2 Dynamic dv/dt RatingID = -2.3A Fast SwitchingTop ViewDescriptionFourth Generation HEXFETs from InternationalRectifier utilize advanced

IRF7103PbF-1HEXFET Power MOSFETVDS 50 V1 8S1 D1RDS(on) max 0.13 2 7G1 D1(@V = 10V)GS3 6S2 D2RDS(on) max 0.20 4 5(@V = 4.5V) G2 D2GSQg (typical) 12 nCSO-8Top ViewID 3.0 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier Manufacturin

PD - 95366IRF710PbF Lead-Freewww.irf.com 16/10/04IRF710PbF2 www.irf.comIRF710PbFwww.irf.com 3IRF710PbF4 www.irf.comIRF710PbFwww.irf.com 5IRF710PbF6 www.irf.comIRF710PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.139)2.62 (.103) 4.20 (.165)- A -

PD - 9.1095BIRF7103HEXFET Power MOSFET Adavanced Process Technology1 8 Ultra Low On-Resistance D1S1VDSS = 50V Dual N-Channel MOSFET 2 7G1 D1 Surface Mount3 6S2 D2RDS(on) = 0.130 Available in Tape & Reel4 5G2 D2 Dynamic dv/dt RatingID = 3.0A Fast SwitchingTop ViewDescriptionFourth Generation HEXFETs from InternationalRectifier utilize advanced p

PD - 9.1097CIRF7105HEXFET Power MOSFET Advanced Process Technology N-CHANNEL MOSFET1 8N-Ch P-ChS1 D1 Ultra Low On-Resistance2 7 Dual N and P Channel MosfetG1 D1VDSS 25V -25V Surface Mount3 6S2 D2 Available in Tape & Reel45RDS(on) 0.10 0.25G2 D2 Dynamic dv/dt RatingP-CHANNEL MOSFET Fast SwitchingTop ViewID 3.5A -2.3ADescriptionFourth Ge

November 2001IRF710B/IRFS710B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 400V, RDS(on) = 3.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.7 nC)planar, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been especially tailored to

IRF710S, SiHF710SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 400 Surface MountRDS(on) ()VGS = 10 V 3.6 Available in Tape and Reel Qg (Max.) (nC) 17 Dynamic dV/dt RatingQgs (nC) 3.4 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 8.5 Ease of ParallelingConfiguration Sin

IRF710, SiHF710Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.6RoHS*Qg (Max.) (nC) 17 Fast Switching COMPLIANTQgs (nC) 3.4 Ease of ParallelingQgd (nC) 8.5 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDTO

PD -95037BIRF7103PbFHEXFET Power MOSFETl Adavanced Process Technologyl Ultra Low On-Resistance1 8S1 D1l Dual N-Channel MOSFETVDSS = 50V2 7G1 D1l Surface Mount3 6l Available in Tape & Reel S2 D2RDS(on) = 0.130l Dynamic dv/dt Rating 4 5G2 D2l Fast SwitchingID = 3.0ATop Viewl Lead-FreeDescriptionThe SO-8 has been modified through a customizedleadf

AUTOMOTIVE GRADE AUIRF7103Q VDSS Features 1 8S1 D1 50V Advanced Planar Technology 2 7G1 D1RDS(on) max. Dual N Channel MOSFET 3 6S2 D2130m4 Low On-Resistance 5G2 D2ID Logic Level Gate Drive 3.0A Top View Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

PD - 95254IRF7104PbFHEXFET Power MOSFETl Adavanced Process Technologyl Ultra Low On-Resistance1 8S1 D1l Dual P-Channel MOSFETVDSS = -20V2 7G1 D1l Surface Mountl Available in Tape & Reel 3 6S2 D2RDS(on) = 0.250l Dynamic dv/dt Rating4 5G2 D2l Fast SwitchingID = -2.3Al Lead-FreeTop ViewDescriptionFourth Generation HEXFETs from InternationalRecti

PD - 95164IRF7105PbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceN-CHANNEL MOSFET1 8N-Ch P-ChS1 D1l Dual N and P Channel Mosfet2 7l Surface MountG1 D1VDSS 25V -25Vl Available in Tape & Reel3 6S2 D2l Dynamic dv/dt Rating45RDS(on) 0.10 0.25G2 D2l Fast SwitchingP-CHANNEL MOSFETl Lead-FreeTop ViewID 3.5A -2.3A

PD - 95162IRF7101PbFHEXFET Power MOSFETl Adavanced Process Technologyl Ultra Low On-Resistance1 8l Dual N-Channel MOSFETS1 D1VDSS = 20Vl Surface Mount2 7G1 D1l Available in Tape & Reel3 6S2 D2RDS(on) = 0.10l Dynamic dv/dt Rating4 5G2 D2l Fast Switchingl Lead-FreeID = 3.5ATop ViewDescriptionFourth Generation HEXFETs from InternationalRectifi

IRF7103TRwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channe

IRF7101TRwww.VBsemi.twDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET200.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D25

IRF7105TRPBFwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at

isc N-Channel Mosfet Transistor IRF710FEATURESLow RDS(on)V Rated at 20VGSSilicon Gate for Fast Switching SpeedRuggedLow Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmo