SI2369DS Todos los transistores

 ..1. Size:237K  vishay
 si2369ds.pdf

Si2369DS Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Material categorization 0.029 at VGS = - 10 V - 7.6 For definitions of compliance please see 0.034 at VGS = - 6 V - 7 11.4 nC - 30 www.vishay.com/doc?99912 0.040 at VGS = - 4.5 V - 6.5 APPLICATIONS

 ..2. Size:2172K  kexin
 si2369ds.pdf

SMD Type MOSFET P-Channel MOSFET SI2369DS (KI2369DS) SOT-23 Unit mm Features +0.1 2.9 -0.1 +0.1 0.4 -0.1 VDS (V) =-30V 3 ID =-7.6A (VGS = 20V) RDS(ON) 29m (VGS =-10V) RDS(ON) 34m (VGS =-6V) RDS(ON) 40m (VGS =-4.5V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta

 0.1. Size:2183K  kexin
 si2369ds-3.pdf

SMD Type MOSFET P-Channel MOSFET SI2369DS (KI2369DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 Features +0.1 0.4 -0.1 VDS (V) =-30V 3 ID =-7.6A (VGS = 20V) RDS(ON) 29m (VGS =-10V) RDS(ON) 34m (VGS =-6V) 1 2 RDS(ON) 40m (VGS =-4.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 1. Gate 2. Source 3. Drain Absolute Maximum Rating

 0.2. Size:905K  cn vbsemi
 si2369ds-t1.pdf

SI2369DS-T1 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT

 9.1. Size:236K  vishay
 si2367ds.pdf

New Product Si2367DS Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.066 at VGS = - 4.5 V - 3.8 TrenchFET Power MOSFET - 20 0.086 at VGS = - 2.5 V - 3.3 9 nC 100 % Rg Tested 0.130 at VGS = - 1.8 V - 2.7 Compliant to RoHS Directive 2002/95/EC T

 9.2. Size:238K  vishay
 si2366ds.pdf

New Product Si2366DS Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.036 at VGS = 10 V 5.8 TrenchFET Power MOSFET 30 3.2 nC 100 % Rg Tested 0.042 at VGS = 4.5 V 5.4 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converters,

 9.3. Size:244K  vishay
 si2365eds.pdf

New Product Si2365EDS Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg Tested Built-in ESD Protection 0.0320 at VGS = - 4.5 V - 5.9 - Typical ESD Performance 3000 V 0.0410 at VGS = - 2.5 V - 5.2 13.8 nC - 20 Material categorization 0.0675 at VGS = - 1.8 V - 4.

 9.4. Size:1503K  kexin
 si2366ds.pdf

SMD Type MOSFET N-Channel MOSFET SI2366DS (KI2366DS) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) 1 2 +0.1 +0.05 0.95 -0.1 RDS(ON) 36m (VGS = 10V) 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 42m (VGS = 4.5V) 1. Gate 2. Source D 3. Drain (3) G (1) (2) S Absolute Maximum Ratings Ta = 25 Par

 9.5. Size:1643K  kexin
 si2366ds-3.pdf

SMD Type MOSFET N-Channel MOSFET SI2366DS (KI2366DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 36m (VGS = 10V) +0.1 1.9 -0.2 RDS(ON) 42m (VGS = 4.5V) 1. Gate 2. Source D 3. Drain (3) G (1) (2) S Absolute Maximum Ratings Ta = 25