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SI2369DS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SI2369DS
   Маркировка: H9*
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 2.5 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.5 V
   Максимально допустимый постоянный ток стока |Id|: 7.6 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 7.6 nC
   Время нарастания (tr): 24 ns
   Выходная емкость (Cd): 150 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.029 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для SI2369DS

 

 

SI2369DS Datasheet (PDF)

 ..1. Size:237K  vishay
 si2369ds.pdf

SI2369DS SI2369DS

Si2369DSVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) Material categorization:0.029 at VGS = - 10 V - 7.6For definitions of compliance please see0.034 at VGS = - 6 V - 7 11.4 nC- 30 www.vishay.com/doc?999120.040 at VGS = - 4.5 V - 6.5APPLICATIONS

 ..2. Size:2172K  kexin
 si2369ds.pdf

SI2369DS SI2369DS

SMD Type MOSFETP-Channel MOSFET SI2369DS (KI2369DS)SOT-23Unit: mm Features+0.12.9 -0.1+0.10.4 -0.1 VDS (V) =-30V3 ID =-7.6A (VGS =20V) RDS(ON) 29m (VGS =-10V) RDS(ON) 34m (VGS =-6V) RDS(ON) 40m (VGS =-4.5V)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11. Gate2. Source3. Drain Absolute Maximum Ratings Ta

 0.1. Size:2183K  kexin
 si2369ds-3.pdf

SI2369DS SI2369DS

SMD Type MOSFETP-Channel MOSFET SI2369DS (KI2369DS)SOT-23-3Unit: mm+0.22.9 -0.1 Features+0.10.4 -0.1 VDS (V) =-30V3 ID =-7.6A (VGS =20V) RDS(ON) 29m (VGS =-10V) RDS(ON) 34m (VGS =-6V)1 2 RDS(ON) 40m (VGS =-4.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.21. Gate2. Source3. Drain Absolute Maximum Rating

 0.2. Size:905K  cn vbsemi
 si2369ds-t1.pdf

SI2369DS SI2369DS

SI2369DS-T1www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT

 9.1. Size:236K  vishay
 si2367ds.pdf

SI2369DS SI2369DS

New ProductSi2367DSVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.066 at VGS = - 4.5 V - 3.8 TrenchFET Power MOSFET- 20 0.086 at VGS = - 2.5 V - 3.3 9 nC 100 % Rg Tested0.130 at VGS = - 1.8 V - 2.7 Compliant to RoHS Directive 2002/95/ECT

 9.2. Size:238K  vishay
 si2366ds.pdf

SI2369DS SI2369DS

New ProductSi2366DSVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 5.8 TrenchFET Power MOSFET30 3.2 nC 100 % Rg Tested0.042 at VGS = 4.5 V 5.4 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC Converters,

 9.3. Size:244K  vishay
 si2365eds.pdf

SI2369DS SI2369DS

New ProductSi2365EDSVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg Tested Built-in ESD Protection 0.0320 at VGS = - 4.5 V - 5.9- Typical ESD Performance 3000 V0.0410 at VGS = - 2.5 V - 5.2 13.8 nC- 20 Material categorization:0.0675 at VGS = - 1.8 V - 4.

 9.4. Size:1503K  kexin
 si2366ds.pdf

SI2369DS SI2369DS

SMD Type MOSFETN-Channel MOSFETSI2366DS (KI2366DS)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) = 30V ID = 5.8 A (VGS = 10V)1 2+0.1+0.050.95 -0.1 RDS(ON) 36m (VGS = 10V) 0.1 -0.01+0.11.9 -0.1 RDS(ON) 42m (VGS = 4.5V)1. Gate2. SourceD3. Drain(3)G(1)(2)S Absolute Maximum Ratings Ta = 25Par

 9.5. Size:1643K  kexin
 si2366ds-3.pdf

SI2369DS SI2369DS

SMD Type MOSFETN-Channel MOSFETSI2366DS (KI2366DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 30V ID = 5.8 A (VGS = 10V)1 2+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 36m (VGS = 10V)+0.11.9 -0.2 RDS(ON) 42m (VGS = 4.5V)1. Gate2. SourceD3. Drain(3)G(1)(2)S Absolute Maximum Ratings Ta = 25

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