SI3475DV Todos los transistores

 ..1. Size:195K  vishay
 si3475dv.pdf

Si3475DV Vishay Siliconix P-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 1.61 at VGS = - 10 V - 0.95 TrenchFET Power MOSFET - 200 8 nC 100 % Rg and UIS Tested 1.65 at VGS = - 6 V - 0.93 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Active Clamp Cir

 ..2. Size:2025K  kexin
 si3475dv.pdf

SMD Type MOSFET P-Channel MOSFET SI3475DV (KI3475DV) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 6 5 4 Features VDS (V) =-200V ID =-0.95 A (VGS =-10V) S RDS(ON) 1.61 (VGS =-10V) 1 2 3 +0.02 0.15 -0.02 +0.01 RDS(ON) 1.65 (VGS =-6V) -0.01 +0.2 -0.1 G 1 Drain 4 Source 2 Drain 5 Drain D 3 Gate 6 Drain Absolute Maximum Ratings Ta = 25 Para

 9.1. Size:222K  vishay
 si3477dv.pdf

New Product Si3477DV Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.0175 at VGS = - 4.5 V - 8 TrenchFET Power MOSFET - 12 0.023 at VGS = - 2.5 V - 8 28.3 nC PWM Optimized 0.033 at VGS = - 1.8 V - 8 100 % Rg Tested Compliant to RoHS Direct

 9.2. Size:198K  vishay
 si3473dv.pdf

Si3473DV Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen free According to IEC61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.023 at VGS = - 4.5 V - 7.9 TrenchFET Power MOSFET 1.8 V Rated 0.029 at VGS = - 2.5 V - 7.0 - 12 22 Ultra-Low On-Resistance 0.041 at VGS = - 1.8 V - 5.9 Compliant to RoHs Directive 2002/95/

 9.3. Size:101K  vishay
 si3471dv.pdf

 9.4. Size:222K  vishay
 si3476dv.pdf

Si3476DV Vishay Siliconix N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Material categorization 0.093 at VGS = 10 V 4.6 For definitions of compliance please see 0.108 at VGS = 6 V 80 4.3 2.6 www.vishay.com/doc?99912 0.126 at VGS = 4.5 V 4 APPLICATIONS Load Swit

 9.5. Size:228K  vishay
 si3474dv.pdf

Si3474DV Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested Material categorization 0.126 at VGS = 10 V 3.8 For definitions of compliance please see 0.147 at VGS = 6 V 100 3.5 2.9 nC www.vishay.com/doc?99912 0.189 at VGS = 4.5 V 3.1 APPL

 9.6. Size:225K  vishay
 si3473cdv.pdf

New Product Si3473CDV Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.022 at VGS = - 4.5 V - 8 TrenchFET Power MOSFET PWM Optimized 0.028 at VGS = - 2.5 V - 8 26 nC - 12 Compliant to RoHS Directive 2002/95/EC 0.036 at VGS = - 1.8 V - 8 APPLIC

 9.7. Size:113K  vishay
 si3471cd.pdf

 9.8. Size:224K  vishay
 si3473cd.pdf

New Product Si3473CDV Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.022 at VGS = - 4.5 V - 8 TrenchFET Power MOSFET PWM Optimized 0.028 at VGS = - 2.5 V - 8 26 nC - 12 Compliant to RoHS Directive 2002/95/EC 0.036 at VGS = - 1.8 V - 8 APPLIC

 9.9. Size:834K  cn vbsemi
 si3477dv-t1-ge3.pdf

SI3477DV-T1-GE3 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 m