SI3475DV PDF and Equivalents Search

 

SI3475DV Specs and Replacement

Type Designator: SI3475DV

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.95 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 26 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.61 Ohm

Package: SOT163

SI3475DV substitution

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SI3475DV datasheet

 ..1. Size:195K  vishay
si3475dv.pdf pdf_icon

SI3475DV

Si3475DV Vishay Siliconix P-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 1.61 at VGS = - 10 V - 0.95 TrenchFET Power MOSFET - 200 8 nC 100 % Rg and UIS Tested 1.65 at VGS = - 6 V - 0.93 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Active Clamp Cir... See More ⇒

 ..2. Size:2025K  kexin
si3475dv.pdf pdf_icon

SI3475DV

SMD Type MOSFET P-Channel MOSFET SI3475DV (KI3475DV) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 6 5 4 Features VDS (V) =-200V ID =-0.95 A (VGS =-10V) S RDS(ON) 1.61 (VGS =-10V) 1 2 3 +0.02 0.15 -0.02 +0.01 RDS(ON) 1.65 (VGS =-6V) -0.01 +0.2 -0.1 G 1 Drain 4 Source 2 Drain 5 Drain D 3 Gate 6 Drain Absolute Maximum Ratings Ta = 25 Para... See More ⇒

 9.1. Size:222K  vishay
si3477dv.pdf pdf_icon

SI3475DV

New Product Si3477DV Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.0175 at VGS = - 4.5 V - 8 TrenchFET Power MOSFET - 12 0.023 at VGS = - 2.5 V - 8 28.3 nC PWM Optimized 0.033 at VGS = - 1.8 V - 8 100 % Rg Tested Compliant to RoHS Direct... See More ⇒

 9.2. Size:198K  vishay
si3473dv.pdf pdf_icon

SI3475DV

Si3473DV Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen free According to IEC61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.023 at VGS = - 4.5 V - 7.9 TrenchFET Power MOSFET 1.8 V Rated 0.029 at VGS = - 2.5 V - 7.0 - 12 22 Ultra-Low On-Resistance 0.041 at VGS = - 1.8 V - 5.9 Compliant to RoHs Directive 2002/95/... See More ⇒

Detailed specifications: SI2337DS, SI2341DS, SI2343DS, SI2345DS, SI2369DS, SI2377EDS, SI2399DS, SI3437DV, 8205A, SI4463BDY, SI7119DN, SI7129DN, SI9435BDY, SI9435DY, SIS2305PLT1G, XP162A11, 2N7002TE

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