AO4306 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AO430630V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4306 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. ID (at VGS=10V) 13AThis device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)

SMD Type MOSFETN-Channel MOSFETAO4306 (KO4306)SOP-8 Features VDS (V) = 30V ID = 13 A (VGS = 10V)1.50 0.15 RDS(ON) 11.5m (VGS = 10V) RDS(ON) 15.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V G

AO430430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4304 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 18Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

AO430230V N-Channel MOSFET30 36General Description Product SummaryVDS30VThe AO4302 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 23Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

SMD Type MOSFETN-Channel MOSFETAO4304 (KO4304)SOP-8 Features VDS (V) = 30V ID = 18 A (VGS = 10V)1.50 0.15 RDS(ON) 6m (VGS = 10V) RDS(ON) 7.6m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 DrainDD 4 GateG GSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30

SMD Type MOSFETN-Channel MOSFETAO4302 (KO4302)SOP-8 Features VDS (V) = 30V ID = 23 A (VGS = 10V) RDS(ON) 4m (VGS = 10V)1.50 0.15 RDS(ON) 5m (VGS = 4.5V)ESD Rating: 2000V HBM1 Source 5 Drain6 Drain2 Source7 Drain3 SourceD D8 Drain4 GateGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dr