AO4306 Datasheet and Replacement
Type Designator: AO4306
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 125 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
Package: SOP8
AO4306 substitution
AO4306 Datasheet (PDF)
ao4306.pdf

AO430630V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4306 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. ID (at VGS=10V) 13AThis device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)
ao4306.pdf

SMD Type MOSFETN-Channel MOSFETAO4306 (KO4306)SOP-8 Features VDS (V) = 30V ID = 13 A (VGS = 10V)1.50 0.15 RDS(ON) 11.5m (VGS = 10V) RDS(ON) 15.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V G
ao4304.pdf

AO430430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4304 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 18Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
ao4302.pdf

AO430230V N-Channel MOSFET30 36General Description Product SummaryVDS30VThe AO4302 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 23Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
Datasheet: 2SK3269-ZJ , 2SK3305-ZJ , 2SK3402-Z , 2SK3424-ZJ , 2SK3430-ZJ , 2SK3434-ZJ , A9452 , AMS6006 , AON7506 , AO4404 , AO4406 , AO4408 , AO4418 , AO4444 , AO4476 , AO4492 , AO4702 .
History: FDD390N15ALZ
Keywords - AO4306 MOSFET datasheet
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History: FDD390N15ALZ



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