AO4306 Specs and Replacement
Type Designator: AO4306
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 125 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
Package: SOP8
AO4306 substitution
- MOSFET ⓘ Cross-Reference Search
AO4306 datasheet
ao4306.pdf
AO4306 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO4306 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 13A This device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V) ... See More ⇒
ao4306.pdf
SMD Type MOSFET N-Channel MOSFET AO4306 (KO4306) SOP-8 Features VDS (V) = 30V ID = 13 A (VGS = 10V) 1.50 0.15 RDS(ON) 11.5m (VGS = 10V) RDS(ON) 15.5m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V G... See More ⇒
ao4304.pdf
AO4304 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO4304 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 18A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) ... See More ⇒
ao4302.pdf
AO4302 30V N-Channel MOSFET 30 36 General Description Product Summary VDS 30V The AO4302 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 23A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: 2SK3269-ZJ, 2SK3305-ZJ, 2SK3402-Z, 2SK3424-ZJ, 2SK3430-ZJ, 2SK3434-ZJ, A9452, AMS6006, IRFB3607, AO4404, AO4406, AO4408, AO4418, AO4444, AO4476, AO4492, AO4702
Keywords - AO4306 MOSFET specs
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