NDT4N65 Todos los transistores

SMD Type MOSFET N-Channel Enhancement MOSFET NDT4N65 (KDT4N65) Features TO-252 Unit mm VDS (V) = 650V +0.15 6.50 -0.15 +0.1 2.30 -0.1 ID = 3.0 A (VGS = 10V) +0.2 5.30 -0.2 +0.8 0.50 -0.7 RDS(ON) 3 (VGS = 10V) D 0.127 +0.1 0.80 -0.1 max G +0.1 1 GATE 2.3 0.60-0.1 S +0.15 4.60 -0.15 2 DRAIN 3 SOURCE Absolute Maximum Ratings Ta = 25 P

SMD Type MOSFET N-Channel MOSFET NDT4N60 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 VDS (V) = 600V ID = 3.9 A (VGS = 10V) RDS(ON) 1.2 (VGS = 10V) 0.127 +0.1 Low effective output capacitance 0.80-0.1 max + 0.1 1 Gate 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 2

SMD Type MOSFET N-Channel Enhancement MOSFET NDT4N70 TO-252 Unit mm Features + 0.15 6.50- 0.15 + 0.1 2.30- 0.1 + 0.2 5.30- 0.2 +0.8 0.50 -0.7 VDS (V) = 700V ID = 4.2 A (VGS = 10V) RDS(ON) 2.15 (VGS = 10V) 2.Drain 0.127 +0.1 0.80-0.1 max +0.1 1.Gate 2.3 0.60-0.1 1Gate +0.15 4.60-0.15 2Drain 3Source 3.Source Absolute Maximum Ratings Ta =

SMD Type MOSFET N-Channel MOSFET NDT4N20L Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 VDS (V) = 200V ID = 1 A (VGS = 10V) RDS(ON) 1.5 (VGS = 10V) RDS(ON) 1.55 (VGS = 5V) 1 2 3 Low gate charge 0.250 2.30 (typ) Gauge Plane 1.Gate 2.Drain 0.70 0.1 3.Source 4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25 Parameter Sy