NDT4N65 MOSFET Datasheet: N-Ch, 650V, 3A. Full specification with pinout and replacement list

NDT4N65 Specs and Replacement

Type Designator: NDT4N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 58 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO252

NDT4N65 substitution

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NDT4N65 datasheet

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SMD Type MOSFET N-Channel Enhancement MOSFET NDT4N65 (KDT4N65) Features TO-252 Unit mm VDS (V) = 650V +0.15 6.50 -0.15 +0.1 2.30 -0.1 ID = 3.0 A (VGS = 10V) +0.2 5.30 -0.2 +0.8 0.50 -0.7 RDS(ON) 3 (VGS = 10V) D 0.127 +0.1 0.80 -0.1 max G +0.1 1 GATE 2.3 0.60-0.1 S +0.15 4.60 -0.15 2 DRAIN 3 SOURCE Absolute Maximum Ratings Ta = 25 P... See More ⇒

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SMD Type MOSFET N-Channel MOSFET NDT4N60 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 VDS (V) = 600V ID = 3.9 A (VGS = 10V) RDS(ON) 1.2 (VGS = 10V) 0.127 +0.1 Low effective output capacitance 0.80-0.1 max + 0.1 1 Gate 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 2... See More ⇒

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SMD Type MOSFET N-Channel Enhancement MOSFET NDT4N70 TO-252 Unit mm Features + 0.15 6.50- 0.15 + 0.1 2.30- 0.1 + 0.2 5.30- 0.2 +0.8 0.50 -0.7 VDS (V) = 700V ID = 4.2 A (VGS = 10V) RDS(ON) 2.15 (VGS = 10V) 2.Drain 0.127 +0.1 0.80-0.1 max +0.1 1.Gate 2.3 0.60-0.1 1Gate +0.15 4.60-0.15 2Drain 3Source 3.Source Absolute Maximum Ratings Ta = ... See More ⇒