NDT6N60 Todos los transistores

DIP Type MOSFET N-Channel MOSFET NDT6N60P TO-251 Features VDS (V) = 600V 1 2 3 ID = 6.2 A (VGS = 10V) RDS(ON) 1.5 (VGS = 10V) Fast switching capability Low reverse transfer Capacitance 1 3 2 Drain Unit mm Gate Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage V

DIP Type MOSFET N-Channel Enhancement MOSFET NDT6N65P TO-251 Features VDS (V) = 650V 1 2 3 ID = 4.8A (VGS = 10V) RDS(ON) 1.8 (VGS = 10V) D Low gate charge ( typical 16nC) 1 3 2 G S Unit mm Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 Tc=25 4.8 Continuou

DIP Type MOSFET N-Channel Enhancement MOSFET NDT6N70P TO-251 Features VDS (V) = 700V ID = 4.8A (VGS = 10V) 1 2 3 RDS(ON) 1.8 (VGS = 10V) Low gate charge ( typical 16nC) D 1 3 2 G S Unit mm Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS 30 Tc=25 4.8 Continuou

SMD Type MOSFET N-Channel Enhancement MOSFET NDT6N70 TO-252 Unit mm + 0.15 Features 6.50- 0.15 +0.1 2.30 -0.1 + 0.2 5.30- 0.2 +0.8 0.50 -0.7 VDS (V) = 700V ID = 4.8A (VGS = 10V) RDS(ON) 1.8 (VGS = 10V) D 0.127 Low gate charge ( typical 16nC) +0.1 0.80 -0.1 max G + 0.1 1 Gate 2.3 0.60- 0.1 + 0.15 4.60- 0.15 2 Drain S 3 Source Absol