NDT6N60
MOSFET. Datasheet pdf. Equivalent
Type Designator: NDT6N60
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 85
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 17
nC
trⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 74
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.7
Ohm
Package:
TO252
NDT6N60
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NDT6N60
Datasheet (PDF)
..1. Size:1815K kexin
ndt6n60.pdf 
SMD Type MOSFETN-Channel MOSFETNDT6N60 TO-252Unit: mm6.50+0.15-0.15+0.12.30 -0.15.30+0.2-0.2 +0.80.50 -0.7 Features4 VDS (V) = 600V ID = 6 A (VGS = 10V) RDS(ON) 1.7 (VGS = 10V) 0.1270.80+0.1 max-0.1 Low Gate Charge Low Reverse transfer capacitances1 Gate2.3 0.60+ 0.1- 0.12 Drain+0.154.60 -0.153 Source4 Drain
0.1. Size:1327K kexin
ndt6n60p.pdf
DIP Type MOSFETN-Channel MOSFETNDT6N60PTO-251 Features VDS (V) = 600V1 2 3 ID = 6.2 A (VGS = 10V) RDS(ON) 1.5 (VGS = 10V) Fast switching capability Low reverse transfer Capacitance1 32DrainUnit: mmGateSource Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 600V Gate-Source Voltage V
8.1. Size:3425K kexin
ndt6n65p.pdf
DIP Type MOSFETN-Channel Enhancement MOSFETNDT6N65PTO-251 Features VDS (V) = 650V1 2 3 ID = 4.8A (VGS = 10V) RDS(ON) 1.8 (VGS = 10V)D Low gate charge ( typical 16nC)1 32GSUnit: mm Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 650V Gate-Source Voltage VGS 30 Tc=25 4.8 Continuou
9.1. Size:3144K kexin
ndt6n70p.pdf
DIP Type MOSFETN-Channel Enhancement MOSFETNDT6N70PTO-251 Features VDS (V) = 700V ID = 4.8A (VGS = 10V)1 2 3 RDS(ON) 1.8 (VGS = 10V) Low gate charge ( typical 16nC)D1 32GSUnit: mm Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 700V Gate-Source Voltage VGS 30 Tc=25 4.8 Continuou
9.2. Size:3175K kexin
ndt6n70.pdf
SMD Type MOSFETN-Channel Enhancement MOSFETNDT6N70TO-252Unit: mm+ 0.15 Features6.50- 0.15+0.12.30 -0.1+ 0.25.30- 0.2 +0.80.50 -0.7 VDS (V) = 700V ID = 4.8A (VGS = 10V) RDS(ON) 1.8 (VGS = 10V)D0.127 Low gate charge ( typical 16nC)+0.10.80 -0.1maxG + 0.11 Gate2.3 0.60- 0.1+ 0.154.60- 0.152 DrainS3 Source Absol
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