SI2356DS MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SI2356DS datasheet

..1. Size:232K vishay
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Si2356DS Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg Tested Material categorization 0.051 at VGS = 10 V 4.3 For definitions of compliance please see 0.054 at VGS = 4.5 V 40 4.1 3.8 nC www.vishay.com/doc?99912 0.070 at VGS = 2.5 V 3.6 APPLICATIONS TO-236

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SMD Type MOSFET N-Channel MOSFET SI2356DS (KI2356DS) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 40V ID = 4.3 A (VGS = 10V) 1 2 RDS(ON) 51m (VGS = 10V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) 54m (VGS = 4.5V) RDS(ON) 70m (VGS = 2.5V) 1. Gate 2. Source 3. Drain D G S Absolute Maximum Rati

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SI2356DS www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G

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SMD Type MOSFET N-Channel MOSFET SI2356DS (KI2356DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 40V ID = 4.3 A (VGS = 10V) 1 2 RDS(ON) 51m (VGS = 10V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 54m (VGS = 4.5V) RDS(ON) 70m (VGS = 2.5V) 1. Gate 2. Source 3. Drain D G S Absolute Maxim