Si2356DSVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg Tested Material categorization:0.051 at VGS = 10 V 4.3For definitions of compliance please see0.054 at VGS = 4.5 V 40 4.1 3.8 nCwww.vishay.com/doc?999120.070 at VGS = 2.5 V 3.6APPLICATIONSTO-236

SMD Type MOSFETN-Channel MOSFETSI2356DS (KI2356DS)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 40V ID = 4.3 A (VGS = 10V)1 2 RDS(ON) 51m (VGS = 10V) +0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 RDS(ON) 54m (VGS = 4.5V) RDS(ON) 70m (VGS = 2.5V)1. Gate2. Source3. DrainDGS Absolute Maximum Rati

SI2356DSwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

SMD Type MOSFETN-Channel MOSFETSI2356DS (KI2356DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 40V ID = 4.3 A (VGS = 10V)1 2 RDS(ON) 51m (VGS = 10V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 54m (VGS = 4.5V) RDS(ON) 70m (VGS = 2.5V)1. Gate2. Source3. DrainDGS Absolute Maxim

Si2351DSVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.115 at VGS = - 4.5 V - 3.0 PWM OptimizedRoHS- 20 3.2 nCCOMPLIANT 100 % Rg Tested0.205 at VGS = - 2.5 V - 2.2TO-236 (SOT-23) G 1 3 D S 2 Top View Si2351DS (G1)*

SI2351DS-T1www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS