SI7898DP MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SI7898DP datasheet

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Si7898DP Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.085 at VGS = 10 V 4.8 TrenchFET Power MOSFETs 150 0.095 at VGS = 6.0 V for Fast Switching 4.5 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile PWM Optimized PowerPAK SO-8

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SMD Type MOSFET N-Channel MOSFET SI7898DP (KI7898DP) SO-8 (DFN5X6) PowerPAK Features VDS (V) = 150V S 6.15 mm 5.15 mm 1 S ID = 4.8 A (VGS = 10V) 2 S D 3 G RDS(ON) 87m (VGS = 10V) 4 D RDS(ON) 98m (VGS = 4.5V) 8 D 7 D 6 D 5 G Bottom View S Absolute Maximum Ratings Ta = 25 Parameter Symbol 10s Steady State Unit Drain-S

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Si7894ADP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Available 0.0036 at VGS = 10 V 25 TrenchFET Power MOSFET 30 58 Optimized for Low Side Synchronous 0.0045 at VGS = 4.5 V 23 Rectifier Operation New Low Thermal Resistance PowerPAK Package w

9.2. Size:93K vishay
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Si7892ADP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET RoHS 0.0042 at VGS = 10 V 25 30 25 COMPLIANT New Low Thermal Resistance PowerPAK 0.0057 at VGS = 4.5 V 22 Package with Low 1.07 mm Profile Low Gate Charge 100 % Rg Tested APPLICATION Sy