SIR422DP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SIR422DP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 145 nS
   Cossⓘ - Capacitancia de salida: 264 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
   Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET SIR422DP

SIR422DP Datasheet (PDF)

..1. Size:491K vishay
sir422dp.pdf

SiR422DPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0066 at VGS = 10 V TrenchFET Power MOSFET4040 16.1 nC 100 % Rg Tested0.008 at VGS = 4.5 V 40 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8APPLICATION

..2. Size:2267K kexin
sir422dp.pdf

SMD Type MOSFETN-Channel MOSFETSIR422DP (KIR422DP) SO-8 (DFN5X6)PowerPAK Features VDS (V) = 40V ID = 40 A (VGS = 10V)S6.15 mm 5.15 mm1S RDS(ON) 7.5 m (VGS = 10V)2S3G RDS(ON) 9 m (VGS = 4.5V)D4D8D7D6D5GBottom ViewS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Volt

0.1. Size:874K cn vbsemi
sir422dp-t1-ge3.pdf

SIR422DP-T1-GE3www.VBsemi.twN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested0.0050 at VGS = 10 V 70APPLICATIONS40 67 nC0.0060 at VGS = 4.5 V 65 Notebook PC Core VRM/POLDDFN5X6Top ViewTop View Bottom View182736 G45PIN1SN-Channel MOS

9.1. Size:308K vishay
sir426dp.pdf

SiR426DPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ()ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0105 at VGS = 10 V Material categorization:30a40 9.3 nCFor definitions of compliance please see0.0125 at VGS = 4.5 V 30awww.vishay.com/doc?99912PowerPAK SO-8APPLICATIONSD DC/DC C

9.2. Size:324K vishay
sir424dp.pdf

SiR424DPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.0055 at VGS = 10 V 30a TrenchFET Power MOSFET20 9.6 nC 100 % Rg Tested0.0074 at VGS = 4.5 V 30a 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8APPLICATIONS

9.3. Size:122K vishay
sir428dp.pdf

New ProductSiR428DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition0.0075 at VGS = 10 V 30g TrenchFET Power MOSFET30 9.5 nC0.0095 at VGS = 4.5 V 100 % Rg Tested30g 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IXTN102N65X2

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