SIR422DP Todos los transistores

 ..1. Size:491K  vishay
 sir422dp.pdf

SiR422DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0066 at VGS = 10 V TrenchFET Power MOSFET 40 40 16.1 nC 100 % Rg Tested 0.008 at VGS = 4.5 V 40 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATION

 ..2. Size:2267K  kexin
 sir422dp.pdf

SMD Type MOSFET N-Channel MOSFET SIR422DP (KIR422DP) SO-8 (DFN5X6) PowerPAK Features VDS (V) = 40V ID = 40 A (VGS = 10V) S 6.15 mm 5.15 mm 1 S RDS(ON) 7.5 m (VGS = 10V) 2 S 3 G RDS(ON) 9 m (VGS = 4.5V) D 4 D 8 D 7 D 6 D 5 G Bottom View S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Volt

 0.1. Size:874K  cn vbsemi
 sir422dp-t1-ge3.pdf

SIR422DP-T1-GE3 www.VBsemi.tw N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested 0.0050 at VGS = 10 V 70 APPLICATIONS 40 67 nC 0.0060 at VGS = 4.5 V 65 Notebook PC Core VRM/POL D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 G 4 5 PIN1 S N-Channel MOS

 9.1. Size:308K  vishay
 sir426dp.pdf

SiR426DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0105 at VGS = 10 V Material categorization 30a 40 9.3 nC For definitions of compliance please see 0.0125 at VGS = 4.5 V 30a www.vishay.com/doc?99912 PowerPAK SO-8 APPLICATIONS D DC/DC C

 9.2. Size:324K  vishay
 sir424dp.pdf

SiR424DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.0055 at VGS = 10 V 30a TrenchFET Power MOSFET 20 9.6 nC 100 % Rg Tested 0.0074 at VGS = 4.5 V 30a 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS

 9.3. Size:122K  vishay
 sir428dp.pdf