Справочник MOSFET. SIR422DP

 

SIR422DP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SIR422DP
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 34.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 145 ns
   Cossⓘ - Выходная емкость: 264 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
   Тип корпуса: SO8

 Аналог (замена) для SIR422DP

 

 

SIR422DP Datasheet (PDF)

 ..1. Size:491K  vishay
 sir422dp.pdf

SIR422DP SIR422DP

SiR422DPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0066 at VGS = 10 V TrenchFET Power MOSFET4040 16.1 nC 100 % Rg Tested0.008 at VGS = 4.5 V 40 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8APPLICATION

 ..2. Size:2267K  kexin
 sir422dp.pdf

SIR422DP SIR422DP

SMD Type MOSFETN-Channel MOSFETSIR422DP (KIR422DP) SO-8 (DFN5X6)PowerPAK Features VDS (V) = 40V ID = 40 A (VGS = 10V)S6.15 mm 5.15 mm1S RDS(ON) 7.5 m (VGS = 10V)2S3G RDS(ON) 9 m (VGS = 4.5V)D4D8D7D6D5GBottom ViewS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Volt

 0.1. Size:874K  cn vbsemi
 sir422dp-t1-ge3.pdf

SIR422DP SIR422DP

SIR422DP-T1-GE3www.VBsemi.twN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested0.0050 at VGS = 10 V 70APPLICATIONS40 67 nC0.0060 at VGS = 4.5 V 65 Notebook PC Core VRM/POLDDFN5X6Top ViewTop View Bottom View182736 G45PIN1SN-Channel MOS

 9.1. Size:308K  vishay
 sir426dp.pdf

SIR422DP SIR422DP

SiR426DPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ()ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0105 at VGS = 10 V Material categorization:30a40 9.3 nCFor definitions of compliance please see0.0125 at VGS = 4.5 V 30awww.vishay.com/doc?99912PowerPAK SO-8APPLICATIONSD DC/DC C

 9.2. Size:324K  vishay
 sir424dp.pdf

SIR422DP SIR422DP

SiR424DPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.0055 at VGS = 10 V 30a TrenchFET Power MOSFET20 9.6 nC 100 % Rg Tested0.0074 at VGS = 4.5 V 30a 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8APPLICATIONS

 9.3. Size:122K  vishay
 sir428dp.pdf

SIR422DP SIR422DP

New ProductSiR428DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition0.0075 at VGS = 10 V 30g TrenchFET Power MOSFET30 9.5 nC0.0095 at VGS = 4.5 V 100 % Rg Tested30g 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK

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