IRF7233 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF7233
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 14 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 9.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.6(min) V
   Qgⓘ - Carga de la puerta: 49 nC
   trⓘ - Tiempo de subida: 540 nS
   Cossⓘ - Capacitancia de salida: 2400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: SO8

Búsqueda de reemplazo de IRF7233 MOSFET

- Selección ⓘ de transistores por parámetros

IRF7233 Datasheet (PDF)

..1. Size:92K international rectifier
irf7233.pdf pdf_icon

PD- 91849DIRF7233HEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -12V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefitp

..2. Size:161K international rectifier
irf7233pbf.pdf pdf_icon

PD - 95939IRF7233PbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -12V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a

8.1. Size:476K st
irf720 irf721 irf722 irf723-fi.pdf pdf_icon

9.1. Size:880K 1
irf720b irfs720b.pdf pdf_icon

November 2001IRF720B/IRFS720B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 400V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to

9.2. Size:273K international rectifier
irf7205pbf-1.pdf pdf_icon

IRF7205PbF-1HEXFET Power MOSFETAVDS -30 V1 8S DRDS(on) max 2 70.07 S D(@V = -10V)GS3 6RDS(on) max S D0.13 (@V = -4.5V)GS45G DQg (typical) 27 nCSO-8ID Top View-4.6 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier Manufacturi

9.3. Size:183K international rectifier
irf7220gpbf.pdf pdf_icon

PD -96258IRF7220GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -14V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G Dl Halogen-FreeRDS(on) = 0.012Top ViewDescriptionThese P-Channel MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve the extremely low on-resi

9.4. Size:178K international rectifier
irf7241.pdf pdf_icon

PD- 94087IRF7241HEXFET Power MOSFET)))) Trench Technology VDSS RDS(on) max (m) ID Ultra Low On-Resistance-40V 41@VGS = -10V -6.2A P-Channel MOSFET70@VGS = -4.5V -5.0A Available in Tape & ReelA1 8S DDescription2 7New trench HEXFET Power MOSFETs from DSInternational Rectifier utilize advanced processing3 6S Dtechniques to achieve ex

9.5. Size:229K international rectifier
irf7240.pdf pdf_icon

PD- 93916IRF7240HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET-40V 0.015@VGS = -10V -10.5A Surface Mount0.025@VGS = -4.5V -8.4A Available in Tape & ReelA1 8DescriptionS DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques toachieve the extremely low on-resistance per silicon3 6

9.6. Size:121K international rectifier
irf7240pbf.pdf pdf_icon

PD- 95253IRF7240PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET-40V 0.015@VGS = -10V -10.5Al Surface Mount0.025@VGS = -4.5V -8.4Al Available in Tape & Reell Lead-FreeA1 8DescriptionS DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques toachieve the extremely low on-resistan

9.7. Size:1163K international rectifier
irf720spbf.pdf pdf_icon

PD - 95119IRF720SPbF Lead-Free3/17/04Document Number: 91044 www.vishay.com1IRF720SPbFDocument Number: 91044 www.vishay.com2IRF720SPbFDocument Number: 91044 www.vishay.com3IRF720SPbFDocument Number: 91044 www.vishay.com4IRF720SPbFDocument Number: 91044 www.vishay.com5IRF720SPbFDocument Number: 91044 www.vishay.com6IRF720SPbFD2Pak Package Outli

9.8. Size:170K international rectifier
irf7241pbf.pdf pdf_icon

PD - 95294IRF7241PbFHEXFET Power MOSFET Trench Technology VDSS RDS(on) max (mW) ID Ultra Low On-Resistance-40V 41@VGS = -10V -6.2A P-Channel MOSFET70@VGS = -4.5V -5.0A Available in Tape & Reel Lead-FreeA1 8S DDescription2 7New trench HEXFET Power MOSFETs from DSInternational Rectifier utilize advanced processing3 6S Dtechniques to achie

9.9. Size:547K international rectifier
irf7210pbf.pdf pdf_icon

PD - 97040IRF7210PbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -12V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G DRDS(on) = 0.007Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silic

9.10. Size:277K international rectifier
irf7205pbf.pdf pdf_icon

IRF7205PbF l Adavanced Process Technologyl Ultra Low On-Resistance A1 8S Dl P-Channel MOSFET 2 7S Dl Surface Mountl Available in Tape & Reel 3 6S D l Dynamic dv/dt Rating45G Dl Fast Switching l Lead-FreeTop ViewDescription

9.11. Size:894K international rectifier
irf720.pdf pdf_icon

PD - 94844IRF720PbF Lead-Free11/14/03Document Number: 91043 www.vishay.com1IRF720PbFDocument Number: 91043 www.vishay.com2IRF720PbFDocument Number: 91043 www.vishay.com3IRF720PbFDocument Number: 91043 www.vishay.com4IRF720PbFDocument Number: 91043 www.vishay.com5IRF720PbFDocument Number: 91043 www.vishay.com6IRF720PbFTO-220AB Package Outline

9.12. Size:349K international rectifier
irf7202.pdf pdf_icon

9.13. Size:182K international rectifier
irf7201.pdf pdf_icon

PD - 91100CPRELIMINARY IRF7201HEXFET Power MOSFET Generation V Technology AA1 8S D Ultra Low On-ResistanceVDSS = 30V2 7 N-Channel MOSFETS D Surface Mount3 6S D Available in Tape & Reel45G D Dynamic dv/dt Rating RDS(on) = 0.030W Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techn

9.14. Size:155K international rectifier
irf7220pbf.pdf pdf_icon

PD - 95172IRF7220PbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -14V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G DRDS(on) = 0.012Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silic

9.15. Size:150K international rectifier
irf7207pbf.pdf pdf_icon

PD - 95166IRF7207PbFHEXFET Power MOSFETl Generation 5 TechnologyA1 8S Dl P-Channel MosfetVDSS = -20V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Dynamic dv/dt Rating4 5G Dl Fast SwitchingRDS(on) = 0.06l Lead-FreeTop ViewDescriptionFifth Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechni

9.16. Size:81K international rectifier
irf7220.pdf pdf_icon

PD- 91850CIRF7220HEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -14V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.012Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area. This benefi

9.17. Size:166K international rectifier
irf7205.pdf pdf_icon

PD - 9.1104BIRF7205HEXFET Power MOSFET Adavanced Process TechnologyA1 8S D Ultra Low On-ResistanceVDSS = -30V2 7 P-Channel MOSFETS D Surface Mount3 6S DRDS(on) = 0.070 Available in Tape & Reel4 5G D Dynamic dv/dt RatingID = -4.6A Fast SwitchingT op ViewDescriptionFourth Generation HEXFETs from InternationalRectifier utilize advanced process

9.18. Size:173K international rectifier
irf7201pbf.pdf pdf_icon

PD- 95022IRF7201PbFl Generation V TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceAA1 8l N-Channel MOSFETS DVDSS = 30Vl Surface Mount2 7S Dl Available in Tape & Reel3 6S Dl Dynamic dv/dt Rating45l Fast Switching G DRDS(on) = 0.030l Lead-FreeTop ViewDescriptionFifth Generation HEXFET power MOSFETs fromInternational Rectifier utiliz

9.19. Size:363K international rectifier
irf720s.pdf pdf_icon

9.20. Size:78K international rectifier
irf7210.pdf pdf_icon

PD- 91844AIRF7210HEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -12V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.007Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area. This benefi

9.21. Size:243K international rectifier
irf7204pbf.pdf pdf_icon

PD - 95165IRF7204PbFHEXFET Power MOSFETl Adavanced Process Technologyl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -20V2 7l Surface MountS Dl Available in Tape & Reel3 6S DRDS(on) = 0.060l Dynamic dv/dt Rating45G Dl Fast Switchingl Lead-Free ID = -5.3ATop ViewDescriptionFourth Generation HEXFETs from InternationalRectifier util

9.22. Size:89K international rectifier
irf7207.pdf pdf_icon

PD - 91879AIRF7207HEXFET Power MOSFET Generation 5 TechnologyA1 8S D P-Channel MosfetVDSS = -20V2 7 Surface MountS D Available in Tape & Reel3 6S D Dynamic dv/dt Rating4 5G D Fast SwitchingRDS(on) = 0.06Top ViewDescriptionFifth Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extre

9.23. Size:145K international rectifier
irf7204.pdf pdf_icon

PD - 9.1103BIRF7204HEXFET Power MOSFET Adavanced Process TechnologyA1 8S D Ultra Low On-ResistanceVDSS = -20V2 7 P-Channel MOSFETS D Surface Mount3 6S DRDS(on) = 0.060 Available in Tape & Reel45G D Dynamic dv/dt RatingID = -5.3A Fast SwitchingTop ViewDescriptionFourth Generation HEXFETs from InternationalRectifier utilize advanced process

9.24. Size:396K international rectifier
auirf7207q.pdf pdf_icon

AUTOMOTIVE GRADE AUIRF7207Q FeaturesHEXFET Power MOSFET Advanced Process Technology ALow On-Resistance 1 8 VDSS -20V S D2 7Logic Level Gate Drive S D3 6P-Channel MOSFET S DRDS(on) max 0.06 4 5G DDynamic dV/dT Rating 150C Operating Temperature ID Top View-5.4A Fast Switching Fully Avalanche Rate

9.25. Size:879K fairchild semi
irf720b.pdf pdf_icon

9.26. Size:926K samsung
irf720a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 1.408 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteris

9.27. Size:201K vishay
irf720 sihf720.pdf pdf_icon

IRF720, SiHF720Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 VAvailable Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8 RoHS* Fast SwitchingQg (Max.) (nC) 20COMPLIANT Ease of ParallelingQgs (nC) 3.3Qgd (nC) 11 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

9.28. Size:199K vishay
irf720spbf sihf720s.pdf pdf_icon

IRF720S, SiHF720SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 400 Surface MountRDS(on) ()VGS = 10 V 1.8 Available in Tape and Reel Qg (Max.) (nC) 20 Dynamic dV/dt RatingQgs (nC) 3.3 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 11 Ease of ParallelingConfiguration Sing

9.29. Size:176K vishay
irf720lpbf sihf720l.pdf pdf_icon

IRF720S, SiHF720S, IRF720L, SiHF720Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mount Available in tape and reel VDS (V) 400 Dynamic dV/dt ratingRDS(on) ()VGS = 10 V 1.8Available Repetitive avalanche ratedQg (Max.) (nC) 20 Fast switchingQgs (nC) 3.3 Ease of parallelingAvailable Simple drive requirementsQ

9.30. Size:201K vishay
irf720pbf sihf720.pdf pdf_icon

9.31. Size:1602K infineon
irf720 sihf720.pdf pdf_icon

9.32. Size:1894K kexin
irf7205.pdf pdf_icon

SMD Type MOSFETP-Channel MOSFETIRF7205 (KRF7205)SOP-8 Features VDS (V) =-30V ID =-4.6 A (VGS =-10V)1.50 0.15 RDS(ON) 70m (VGS =-10V) RDS(ON) 130m (VGS =-4.5V)1 Source 5 Drain Fast Switching6 Drain2 Source7 Drain3 Source8 Drain4 GateA1 8S D2 7S D3 6S D4 5G D Absolute Maximum Ratings Ta = 25Parameter

9.33. Size:2255K cn vbsemi
irf7204tr.pdf pdf_icon

IRF7204TRwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typical

9.34. Size:2086K cn vbsemi
irf7210tr.pdf pdf_icon

IRF7210TRwww.VBsemi.twP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.0050 at VGS = - 4.5 V - 16 TrenchFET Power MOSFET0.0065 at VGS = - 2.5 V - 12 - 15 Compliant to RoHS Directive 2002/95/EC0.0100 at VGS = - 1.8 V - 13APPLICATIONS Load Switch Battery SwitchS

9.35. Size:806K cn vbsemi
irf7205tr.pdf pdf_icon

IRF7205TRwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop

9.36. Size:818K cn vbsemi
irf7241tr.pdf pdf_icon

IRF7241TRwww.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD1

9.37. Size:736K cn vbsemi
irf7240trpbf.pdf pdf_icon

IRF7240TRPBFwww.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD

Otros transistores... IRF7207 , IRF720A , IRF720FI , IRF720S , IRF721 , IRF722 , IRF7220 , IRF723 , IRFP064N , IRF730 , IRF730A , IRF730AL , IRF730AS , IRF730FI , IRF730S , IRF731 , IRF732 .