PD- 91849DIRF7233HEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -12V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefitp

PD - 95939IRF7233PbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -12V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a

November 2001IRF720B/IRFS720B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 400V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to

IRF7205PbF-1HEXFET Power MOSFETAVDS -30 V1 8S DRDS(on) max 2 70.07 S D(@V = -10V)GS3 6RDS(on) max S D0.13 (@V = -4.5V)GS45G DQg (typical) 27 nCSO-8ID Top View-4.6 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier Manufacturi

PD -96258IRF7220GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -14V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G Dl Halogen-FreeRDS(on) = 0.012Top ViewDescriptionThese P-Channel MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve the extremely low on-resi

PD- 94087IRF7241HEXFET Power MOSFET)))) Trench Technology VDSS RDS(on) max (m) ID Ultra Low On-Resistance-40V 41@VGS = -10V -6.2A P-Channel MOSFET70@VGS = -4.5V -5.0A Available in Tape & ReelA1 8S DDescription2 7New trench HEXFET Power MOSFETs from DSInternational Rectifier utilize advanced processing3 6S Dtechniques to achieve ex

PD- 93916IRF7240HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET-40V 0.015@VGS = -10V -10.5A Surface Mount0.025@VGS = -4.5V -8.4A Available in Tape & ReelA1 8DescriptionS DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques toachieve the extremely low on-resistance per silicon3 6

PD- 95253IRF7240PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET-40V 0.015@VGS = -10V -10.5Al Surface Mount0.025@VGS = -4.5V -8.4Al Available in Tape & Reell Lead-FreeA1 8DescriptionS DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques toachieve the extremely low on-resistan

PD - 95119IRF720SPbF Lead-Free3/17/04Document Number: 91044 www.vishay.com1IRF720SPbFDocument Number: 91044 www.vishay.com2IRF720SPbFDocument Number: 91044 www.vishay.com3IRF720SPbFDocument Number: 91044 www.vishay.com4IRF720SPbFDocument Number: 91044 www.vishay.com5IRF720SPbFDocument Number: 91044 www.vishay.com6IRF720SPbFD2Pak Package Outli

PD - 95294IRF7241PbFHEXFET Power MOSFET Trench Technology VDSS RDS(on) max (mW) ID Ultra Low On-Resistance-40V 41@VGS = -10V -6.2A P-Channel MOSFET70@VGS = -4.5V -5.0A Available in Tape & Reel Lead-FreeA1 8S DDescription2 7New trench HEXFET Power MOSFETs from DSInternational Rectifier utilize advanced processing3 6S Dtechniques to achie

PD - 97040IRF7210PbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -12V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G DRDS(on) = 0.007Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silic

IRF7205PbF l Adavanced Process Technologyl Ultra Low On-Resistance A1 8S Dl P-Channel MOSFET 2 7S Dl Surface Mountl Available in Tape & Reel 3 6S D l Dynamic dv/dt Rating45G Dl Fast Switching l Lead-FreeTop ViewDescription

PD - 94844IRF720PbF Lead-Free11/14/03Document Number: 91043 www.vishay.com1IRF720PbFDocument Number: 91043 www.vishay.com2IRF720PbFDocument Number: 91043 www.vishay.com3IRF720PbFDocument Number: 91043 www.vishay.com4IRF720PbFDocument Number: 91043 www.vishay.com5IRF720PbFDocument Number: 91043 www.vishay.com6IRF720PbFTO-220AB Package Outline

PD - 91100CPRELIMINARY IRF7201HEXFET Power MOSFET Generation V Technology AA1 8S D Ultra Low On-ResistanceVDSS = 30V2 7 N-Channel MOSFETS D Surface Mount3 6S D Available in Tape & Reel45G D Dynamic dv/dt Rating RDS(on) = 0.030W Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techn

PD - 95172IRF7220PbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -14V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G DRDS(on) = 0.012Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silic

PD - 95166IRF7207PbFHEXFET Power MOSFETl Generation 5 TechnologyA1 8S Dl P-Channel MosfetVDSS = -20V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Dynamic dv/dt Rating4 5G Dl Fast SwitchingRDS(on) = 0.06l Lead-FreeTop ViewDescriptionFifth Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechni

PD- 91850CIRF7220HEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -14V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.012Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area. This benefi

PD - 9.1104BIRF7205HEXFET Power MOSFET Adavanced Process TechnologyA1 8S D Ultra Low On-ResistanceVDSS = -30V2 7 P-Channel MOSFETS D Surface Mount3 6S DRDS(on) = 0.070 Available in Tape & Reel4 5G D Dynamic dv/dt RatingID = -4.6A Fast SwitchingT op ViewDescriptionFourth Generation HEXFETs from InternationalRectifier utilize advanced process

PD- 95022IRF7201PbFl Generation V TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceAA1 8l N-Channel MOSFETS DVDSS = 30Vl Surface Mount2 7S Dl Available in Tape & Reel3 6S Dl Dynamic dv/dt Rating45l Fast Switching G DRDS(on) = 0.030l Lead-FreeTop ViewDescriptionFifth Generation HEXFET power MOSFETs fromInternational Rectifier utiliz

PD- 91844AIRF7210HEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -12V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.007Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area. This benefi

PD - 95165IRF7204PbFHEXFET Power MOSFETl Adavanced Process Technologyl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -20V2 7l Surface MountS Dl Available in Tape & Reel3 6S DRDS(on) = 0.060l Dynamic dv/dt Rating45G Dl Fast Switchingl Lead-Free ID = -5.3ATop ViewDescriptionFourth Generation HEXFETs from InternationalRectifier util

PD - 91879AIRF7207HEXFET Power MOSFET Generation 5 TechnologyA1 8S D P-Channel MosfetVDSS = -20V2 7 Surface MountS D Available in Tape & Reel3 6S D Dynamic dv/dt Rating4 5G D Fast SwitchingRDS(on) = 0.06Top ViewDescriptionFifth Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extre

PD - 9.1103BIRF7204HEXFET Power MOSFET Adavanced Process TechnologyA1 8S D Ultra Low On-ResistanceVDSS = -20V2 7 P-Channel MOSFETS D Surface Mount3 6S DRDS(on) = 0.060 Available in Tape & Reel45G D Dynamic dv/dt RatingID = -5.3A Fast SwitchingTop ViewDescriptionFourth Generation HEXFETs from InternationalRectifier utilize advanced process

AUTOMOTIVE GRADE AUIRF7207Q FeaturesHEXFET Power MOSFET Advanced Process Technology ALow On-Resistance 1 8 VDSS -20V S D2 7Logic Level Gate Drive S D3 6P-Channel MOSFET S DRDS(on) max 0.06 4 5G DDynamic dV/dT Rating 150C Operating Temperature ID Top View-5.4A Fast Switching Fully Avalanche Rate

November 2001IRF720B/IRFS720B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 400V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 1.408 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteris

IRF720, SiHF720Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 VAvailable Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8 RoHS* Fast SwitchingQg (Max.) (nC) 20COMPLIANT Ease of ParallelingQgs (nC) 3.3Qgd (nC) 11 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

IRF720S, SiHF720SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 400 Surface MountRDS(on) ()VGS = 10 V 1.8 Available in Tape and Reel Qg (Max.) (nC) 20 Dynamic dV/dt RatingQgs (nC) 3.3 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 11 Ease of ParallelingConfiguration Sing

IRF720S, SiHF720S, IRF720L, SiHF720Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mount Available in tape and reel VDS (V) 400 Dynamic dV/dt ratingRDS(on) ()VGS = 10 V 1.8Available Repetitive avalanche ratedQg (Max.) (nC) 20 Fast switchingQgs (nC) 3.3 Ease of parallelingAvailable Simple drive requirementsQ

IRF720, SiHF720Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 VAvailable Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8 RoHS* Fast SwitchingQg (Max.) (nC) 20COMPLIANT Ease of ParallelingQgs (nC) 3.3Qgd (nC) 11 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

IRF720, SiHF720Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 VAvailable Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8 RoHS* Fast SwitchingQg (Max.) (nC) 20COMPLIANT Ease of ParallelingQgs (nC) 3.3Qgd (nC) 11 Simple Drive RequirementsConfiguration Single Lead (Pb)-free AvailableDDESCRIPTION

PD- 95253IRF7240PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET-40V 0.015@VGS = -10V -10.5Al Surface Mount0.025@VGS = -4.5V -8.4Al Available in Tape & Reell Lead-FreeA1 8DescriptionS DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques toachieve the extremely low on-resistan

PD - 95294IRF7241PbFHEXFET Power MOSFET Trench Technology VDSS RDS(on) max (mW) ID Ultra Low On-Resistance-40V 41@VGS = -10V -6.2A P-Channel MOSFET70@VGS = -4.5V -5.0A Available in Tape & Reel Lead-FreeA1 8S DDescription2 7New trench HEXFET Power MOSFETs from DSInternational Rectifier utilize advanced processing3 6S Dtechniques to achie

IRF7205PbF l Adavanced Process Technologyl Ultra Low On-Resistance A1 8S Dl P-Channel MOSFET 2 7S Dl Surface Mountl Available in Tape & Reel 3 6S D l Dynamic dv/dt Rating45G Dl Fast Switching l Lead-FreeTop ViewDescription

PD - 95172IRF7220PbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -14V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G DRDS(on) = 0.012Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silic

PD- 95022IRF7201PbFl Generation V TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceAA1 8l N-Channel MOSFETS DVDSS = 30Vl Surface Mount2 7S Dl Available in Tape & Reel3 6S Dl Dynamic dv/dt Rating45l Fast Switching G DRDS(on) = 0.030l Lead-FreeTop ViewDescriptionFifth Generation HEXFET power MOSFETs fromInternational Rectifier utiliz

PD - 95165IRF7204PbFHEXFET Power MOSFETl Adavanced Process Technologyl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -20V2 7l Surface MountS Dl Available in Tape & Reel3 6S DRDS(on) = 0.060l Dynamic dv/dt Rating45G Dl Fast Switchingl Lead-Free ID = -5.3ATop ViewDescriptionFourth Generation HEXFETs from InternationalRectifier util

SMD Type MOSFETP-Channel MOSFETIRF7205 (KRF7205)SOP-8 Features VDS (V) =-30V ID =-4.6 A (VGS =-10V)1.50 0.15 RDS(ON) 70m (VGS =-10V) RDS(ON) 130m (VGS =-4.5V)1 Source 5 Drain Fast Switching6 Drain2 Source7 Drain3 Source8 Drain4 GateA1 8S D2 7S D3 6S D4 5G D Absolute Maximum Ratings Ta = 25Parameter

IRF7204TRwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typical

IRF7210TRwww.VBsemi.twP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.0050 at VGS = - 4.5 V - 16 TrenchFET Power MOSFET0.0065 at VGS = - 2.5 V - 12 - 15 Compliant to RoHS Directive 2002/95/EC0.0100 at VGS = - 1.8 V - 13APPLICATIONS Load Switch Battery SwitchS

IRF7205TRwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop

IRF7241TRwww.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD1

IRF7240TRPBFwww.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD