SM2014NSKP Todos los transistores

 

SM2014NSKP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SM2014NSKP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 6.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 14.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 135 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0195 Ohm
   Paquete / Cubierta: DFN5X6-8
 

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SM2014NSKP Datasheet (PDF)

 ..1. Size:286K  sino
sm2014nskp.pdf pdf_icon

SM2014NSKP

SM2014NSKPN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/13.8A,DDDDRDS(ON)= 19.5m (max.) @ VGS=4.5VRDS(ON)= 27m (max.) @ VGS=2.5VGPin 1 Reliable and RuggedSSS Lead Free and Green Devices AvailableDFN5x6-8(RoHS Compliant) ESD Protection.D (5, 6)ApplicationsG (4) Power Management in Notebook Computer,Portable Equipment and Battery

 6.1. Size:259K  sino
sm2014nsu.pdf pdf_icon

SM2014NSKP

SM2014NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/13.8A,DRDS(ON)= 19.5m (max.) @ VGS=4.5VSRDS(ON)= 27m (max.) @ VGS=2.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant) ESD Protection. D (2)ApplicationsG (1) Power Management in Notebook Computer,Portable Equipment and Battery PoweredSyste

 8.1. Size:969K  globaltech semi
gsm2014.pdf pdf_icon

SM2014NSKP

GSM2014 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2014, N-Channel enhancement mode 20V/10A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/8A,RDS(ON)=17m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/5A,RDS(ON)=21m@VGS=1.8V Super high density cell design for extremely These devices are particularl

 9.1. Size:117K  st
esm2012.pdf pdf_icon

SM2014NSKP

ESM2012DVNPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION TO CASEth SPECIFIED ACCIDENTAL OVERLOADAREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCEINDUSTRIAL APPLICATIONS: MOTOR CONTROL UPS DC/DC & DC/AC CONVERTERSISOTOPINTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS

Otros transistores... SM7A24NSU , SM7A24NSUB , SM7A25NSF , SM7A25NSFP , SM7A25NSU , SM7A25NSUB , SM2004NSD , SM2006NSK , 18N50 , SM2014NSU , SM2030NSU , SM2054NSD , SM2054NSV , SM2201NSQG , SM2202NSQE , SM2202NSQG , SM4831NAK .

History: QS5U16 | NTMFS4841NHT1G | GP2M002A060XX | BL9N90-A | UPA1804GR | 2SK1768 | BL15N25-P

 

 
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