SM2014NSKP Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SM2014NSKP
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 6.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 14.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 135 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0195 Ohm
Тип корпуса: DFN5X6-8
Аналог (замена) для SM2014NSKP
SM2014NSKP Datasheet (PDF)
sm2014nskp.pdf

SM2014NSKPN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/13.8A,DDDDRDS(ON)= 19.5m (max.) @ VGS=4.5VRDS(ON)= 27m (max.) @ VGS=2.5VGPin 1 Reliable and RuggedSSS Lead Free and Green Devices AvailableDFN5x6-8(RoHS Compliant) ESD Protection.D (5, 6)ApplicationsG (4) Power Management in Notebook Computer,Portable Equipment and Battery
sm2014nsu.pdf

SM2014NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/13.8A,DRDS(ON)= 19.5m (max.) @ VGS=4.5VSRDS(ON)= 27m (max.) @ VGS=2.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant) ESD Protection. D (2)ApplicationsG (1) Power Management in Notebook Computer,Portable Equipment and Battery PoweredSyste
gsm2014.pdf

GSM2014 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2014, N-Channel enhancement mode 20V/10A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/8A,RDS(ON)=17m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/5A,RDS(ON)=21m@VGS=1.8V Super high density cell design for extremely These devices are particularl
esm2012.pdf

ESM2012DVNPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION TO CASEth SPECIFIED ACCIDENTAL OVERLOADAREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCEINDUSTRIAL APPLICATIONS: MOTOR CONTROL UPS DC/DC & DC/AC CONVERTERSISOTOPINTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Другие MOSFET... SM7A24NSU , SM7A24NSUB , SM7A25NSF , SM7A25NSFP , SM7A25NSU , SM7A25NSUB , SM2004NSD , SM2006NSK , 18N50 , SM2014NSU , SM2030NSU , SM2054NSD , SM2054NSV , SM2201NSQG , SM2202NSQE , SM2202NSQG , SM4831NAK .
History: 5HB03N8 | IRF7807D2PBF | FDG313ND87Z | IRFU220N | QS5U16 | FQPF4N60 | 2N5019
History: 5HB03N8 | IRF7807D2PBF | FDG313ND87Z | IRFU220N | QS5U16 | FQPF4N60 | 2N5019



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