SM2202NSQE Todos los transistores

 ..1. Size:185K  sino
 sm2202nsqe.pdf

SM2202NSQE N-Channel Enhancement Mode MOSFET Features Pin Description S D 30V/8.4A, D D RDS(ON) = 15.5m (max.) @ VGS =10V RDS(ON) = 21m (max.) @ VGS =4.5V G S D Pin 1 D Avalanche Rated TDFN2x2-6 Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6) DD DD (RoHS Compliant) 100% UIS Tested Applications (3)G Power Management in Notebook Computer,

 5.1. Size:187K  sino
 sm2202nsqg.pdf

SM2202NSQG N-Channel Enhancement Mode MOSFET Features Pin Description S D 30V/8.4A, D D RDS(ON) = 15.5m (max.) @ VGS =10V RDS(ON) = 21m (max.) @ VGS =4.5V G S D Pin 1 D Avalanche Rated DFN2x2-6 Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6) DD DD (RoHS Compliant) 100% UIS Tested Applications (3)G Power Management in Notebook Computer,

 8.1. Size:1198K  huashuo
 hsm2202.pdf

HSM2202 Dual N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSM2202 is the high cell density trenched N- V 20 V DS ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 9.5 m DS(ON),TYP converter applications. I 8 A D The HSM2202 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full functi

 9.1. Size:179K  sino
 sm2207psqg.pdf

SM2207PSQG P-Channel Enhancement Mode MOSFET Features Pin Description -12V/-8.7A, S D D D RDS(ON) = 22m (max.) @ VGS =-4.5V RDS(ON) = 30m (max.) @ VGS =-2.5V G S Pin 1 RDS(ON) = 38m (max.) @ VGS =-1.8V D D RDS(ON) = 57m (max.) @ VGS =-1.5V DFN2x2-6 Reliable and Rugged (1,2,5,6) Lead Free and Green Devices Available DD DD (RoHS Compliant) Applications (3)G

 9.2. Size:184K  sino
 sm2201nsqg.pdf

SM2201NSQG N-Channel Enhancement Mode MOSFET Features Pin Description S D 30V/10.2A, D D RDS(ON) = 10.5m (max.) @ VGS =10V RDS(ON) = 14m (max.) @ VGS =4.5V G S D Pin 1 D Reliable and Rugged DFN2x2-6 Lead Free and Green Devices Available (RoHS Compliant) (1,2,5,6) DD DD 100% UIS Tested Applications (3)G Power Management in Notebook Computer, (4)S Portable

 9.3. Size:181K  sino
 sm2204nsqg.pdf

SM2204NSQG N-Channel Enhancement Mode MOSFET Features Pin Description S D 30V/7A, D D RDS(ON) = 23m (max.) @ VGS =10V RDS(ON) = 31.5m (max.) @ VGS =4.5V G S D Pin 1 D Avalanche Rated DFN2x2-6 Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6) DDDD (RoHS Compliant) 100% UIS Tested Applications (3)G Load Switch HDD (4)S DC/DC Converter N

 9.4. Size:186K  sino
 sm2203nsqg.pdf

SM2203NSQG N-Channel Enhancement Mode MOSFET Features Pin Description S D 30V/7.4A, D D RDS(ON) = 20.5m (max.) @ VGS =10V RDS(ON) = 28.5m (max.) @ VGS =4.5V G S Pin 1 D D Reliable and Rugged DFN2x2-6 Lead Free and Green Devices Available (RoHS Compliant) (1,2,5,6) DD DD 100% UIS Tested Applications (3)G Power Management in Notebook Computer, (4)S Portable

 9.5. Size:180K  sino
 sm2205psqg.pdf

SM2205PSQG P-Channel Enhancement Mode MOSFET Features Pin Description S D -20V/-6.5A, D D RDS(ON) = 39m (max.) @ VGS =-4.5V RDS(ON) = 56m (max.) @ VGS =-2.5V G S Pin 1 D D Reliable and Rugged DFN2x2-6 Lead Free and Green Devices Available (RoHS Compliant) (1,2,5,6) DD DD Applications (3)G Power Management in Notebook Computer, (4)S Portable Equipment and Bat

 9.6. Size:259K  sino
 sm2206nsqg.pdf

SM2206NSQG N-Channel Enhancement Mode MOSFET Features Pin Description S D 20V/9A, D D RDS(ON) = 10.9m (max.) @ VGS =4.5V RDS(ON) = 15.5m (max.) @ VGS =2.5V S G Pin 1 D D RDS(ON) = 26m (max.) @ VGS =1.8V 100% UIS + Rg Tested DFN2x2A-6_EP Reliable and Rugged (1,2,5,6) DDDD Lead Free and Green Devices Available (RoHS Compliant) Applications (3)G Li-lon Battery Pac

 9.7. Size:258K  sino
 sm2208nsqg.pdf

SM2208NSQG N-Channel Enhancement Mode MOSFET Features Pin Description S D 24V/12A, D D RDS(ON) = 5.8m (max.) @ VGS =10V RDS(ON) = 6.9m (max.) @ VGS =4.5V G S Pin 1 D D RDS(ON) = 10m (max.) @ VGS =2.5V 100% UIS + Rg Tested DFN2x2A-6_EP Reliable and Rugged (1,2,5,6) DDDD Lead Free and Green Devices Available (RoHS Compliant) Applications (3)G Battery Management A