SM2202NSQG Todos los transistores

 

SM2202NSQG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SM2202NSQG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.66 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0155 Ohm
   Paquete / Cubierta: DFN2X2A-6
 

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SM2202NSQG Datasheet (PDF)

 ..1. Size:187K  sino
sm2202nsqg.pdf pdf_icon

SM2202NSQG

SM2202NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/8.4A,DDRDS(ON) = 15.5m(max.) @ VGS =10VRDS(ON) = 21m(max.) @ VGS =4.5VGSD Pin 1D Avalanche RatedDFN2x2-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DD DD(RoHS Compliant) 100% UIS TestedApplications(3)G Power Management in Notebook Computer,

 5.1. Size:185K  sino
sm2202nsqe.pdf pdf_icon

SM2202NSQG

SM2202NSQEN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 30V/8.4A,DDRDS(ON) = 15.5m(max.) @ VGS =10VRDS(ON) = 21m(max.) @ VGS =4.5V GSD Pin 1D Avalanche RatedTDFN2x2-6 Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DD DD(RoHS Compliant) 100% UIS TestedApplications(3)G Power Management in Notebook Computer,

 8.1. Size:1198K  huashuo
hsm2202.pdf pdf_icon

SM2202NSQG

HSM2202 Dual N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSM2202 is the high cell density trenched N-V 20 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 9.5 m DS(ON),TYPconverter applications. I 8 A DThe HSM2202 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full functi

 9.1. Size:179K  sino
sm2207psqg.pdf pdf_icon

SM2202NSQG

SM2207PSQGP-Channel Enhancement Mode MOSFETFeatures Pin Description -12V/-8.7A,SDDDRDS(ON) = 22m(max.) @ VGS =-4.5VRDS(ON) = 30m(max.) @ VGS =-2.5VG SPin 1RDS(ON) = 38m(max.) @ VGS =-1.8VDDRDS(ON) = 57m(max.) @ VGS =-1.5VDFN2x2-6 Reliable and Rugged(1,2,5,6) Lead Free and Green Devices AvailableDD DD(RoHS Compliant)Applications(3)G

Otros transistores... SM2006NSK , SM2014NSKP , SM2014NSU , SM2030NSU , SM2054NSD , SM2054NSV , SM2201NSQG , SM2202NSQE , SKD502T , SM4831NAK , SM4832NSK , SM4834NSK , SM4836NSK , SM4838NSK , SM4839NSK , SM4842NSK , SM4843NSK .

History: STU6N60DM2 | IRFS9N60APBF | IXFT13N100 | SUP45N03-13L | IPB100N04S2-04 | MS49P63

 

 
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