SM2306NSA Todos los transistores

 ..1. Size:257K  sino
 sm2306nsa.pdf

SM2306NSA N-Channel Enhancement Mode MOSFET Features Pin Description 30V/4.7A, D RDS(ON)=40m (max.) @ VGS=10V S RDS(ON)=60m (max.) @ VGS=4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-3 (RoHS Compliant) D Applications G Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. S Load Switch N-Chann

 8.1. Size:238K  taiwansemi
 tsm2306cx.pdf

TSM2306 30V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Gate 2. Source 57 @ VGS =10V 3.5 3. Drain 30 94 @ VGS =4.5V 2.8 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Pa

 8.2. Size:947K  globaltech semi
 gsm2306a.pdf

GSM2306A 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2306A, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m @VGS=1.8V Super high density cell design for These devices are particularl

 8.3. Size:948K  globaltech semi
 gsm2306ae.pdf

GSM2306AE 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2306AE, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A,RDS(ON)=340m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m @VGS=1.8V Super high density cell design for These devices are particula

 8.4. Size:149K  silicon standard
 ssm2306gn.pdf

SSM2306N N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.5V gate-drive BVDSS 20V Lower on-resistance RDS(ON) 32m D Surface-mount package ID 5.3A S SOT-23 G Description Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance in an extremely efficient and D cost-effective device. The SOT-23 package is widely use

 8.5. Size:2453K  cn sps
 sm2306.pdf

SM2306 N-Channel High Density Trench MOSFET Features 1 Advanced Trench Process Technology. 2 High Density Cell Design for Ultra Low On-Resistance. 3 RoHS Compliant. PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 37 @ VGS = 10V, ID=4.0A 30V 4.0A 49 @ VGS = 4.5V, ID=3.5A SM2306 Pin Assignment & Symbol Ordering Information Ordering Number Pin Ass