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SM2306NSA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SM2306NSA
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 40 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для SM2306NSA

 

 

SM2306NSA Datasheet (PDF)

 ..1. Size:257K  sino
sm2306nsa.pdf

SM2306NSA
SM2306NSA

SM2306NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/4.7A,D RDS(ON)=40m (max.) @ VGS=10VS RDS(ON)=60m (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3(RoHS Compliant)DApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery Powered Systems.S Load SwitchN-Chann

 8.1. Size:238K  taiwansemi
tsm2306cx.pdf

SM2306NSA
SM2306NSA

TSM2306 30V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 57 @ VGS =10V 3.5 3. Drain 30 94 @ VGS =4.5V 2.8 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Pa

 8.2. Size:947K  globaltech semi
gsm2306a.pdf

SM2306NSA
SM2306NSA

GSM2306A 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2306A, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m@VGS=1.8V Super high density cell design for These devices are particularl

 8.3. Size:948K  globaltech semi
gsm2306ae.pdf

SM2306NSA
SM2306NSA

GSM2306AE 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2306AE, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A,RDS(ON)=340m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m@VGS=1.8V Super high density cell design for These devices are particula

 8.4. Size:149K  silicon standard
ssm2306gn.pdf

SM2306NSA
SM2306NSA

SSM2306NN-CHANNEL ENHANCEMENT-MODE POWER MOSFETCapable of 2.5V gate-drive BVDSS 20VLower on-resistance RDS(ON) 32mDSurface-mount package ID 5.3ASSOT-23GDescriptionPower MOSFETs from Silicon Standard utilize advanced processing techniques toachieve the lowest possible on-resistance in an extremely efficient andDcost-effective device.The SOT-23 package is widely use

 8.5. Size:2453K  cn sps
sm2306.pdf

SM2306NSA
SM2306NSA

SM2306N-Channel High Density Trench MOSFET Features1 Advanced Trench Process Technology. 2 High Density Cell Design for Ultra Low On-Resistance. 3 RoHS Compliant. PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 37 @ VGS = 10V, ID=4.0A 30V 4.0A 49 @ VGS = 4.5V, ID=3.5A SM2306 Pin Assignment & Symbol Ordering Information Ordering Number Pin Ass

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