SM2314NSA Todos los transistores

 ..1. Size:257K  sino
 sm2314nsa.pdf

SM2314NSA N-Channel Enhancement Mode MOSFET Features Pin Description 20V/4.5A , D RDS(ON)=45m (max.) @ VGS=4.5V RDS(ON)=60m (max.) @ VGS=2.5V S RDS(ON)=85m (max.) @ VGS=1.8V G Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-3 (RoHS Compliant) D ESD Protection Applications G Power Management in Notebook Computer, Portable Equipment and Batt

 8.1. Size:195K  taiwansemi
 tsm2314cx.pdf

TSM2314 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Drain 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 20 100 @ VGS = 1.8V 2.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderin

 8.2. Size:311K  silicon standard
 ssm2314gn.pdf

SSM2314GN N-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS 20V D Simple drive requirement R 75m DS(ON) Fast switching ID 3.5A G Pb-free; RoHS compliant. S DESCRIPTION D The SSM2314GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. This device is S suitable for low-voltage applications such as DC

 8.3. Size:3144K  cn sps
 sm2314.pdf

SM2314 N-Channel High Density Trench MOSFET (20V, 5.4A) Pb PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 30 @ VGS = 4.0V, ID=5.4A 30 @ VGS = 4.0V, ID=5.4A 30 @ VGS = 4.0V, ID=5.4A 30 @ VGS = 4.0V, ID=5.4A 20V 5.4A 40 @ VGS = 2.5V, ID=4.3A 40 @ VGS = 2.5V, ID=4.3A 40 @ VGS = 2.5V, ID=4.3A 40 @ VGS = 2.5V, ID=4.3A Features 1 Advanced Trench Process Technology.

 8.4. Size:912K  cn vbsemi
 tsm2314cx.pdf

TSM2314CX www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC