SM2314NSA Datasheet and Replacement

SM2314NSAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/4.5A ,DRDS(ON)=45m (max.) @ VGS=4.5VRDS(ON)=60m (max.) @ VGS=2.5VSRDS(ON)=85m (max.) @ VGS=1.8VG Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-3(RoHS Compliant)D ESD ProtectionApplicationsG Power Management in Notebook Computer,Portable Equipment and Batt

TSM2314 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 20 100 @ VGS = 1.8V 2.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderin

SSM2314GNN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 20VDSimple drive requirement R 75mDS(ON)Fast switching ID 3.5AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2314GN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. This device is Ssuitable for low-voltage applications such as DC

SM2314N-Channel High Density Trench MOSFET (20V, 5.4A) Pb PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 30 @ VGS = 4.0V, ID=5.4A30 @ VGS = 4.0V, ID=5.4A 30 @ VGS = 4.0V, ID=5.4A 30 @ VGS = 4.0V, ID=5.4A20V 5.4A 40 @ VGS = 2.5V, ID=4.3A40 @ VGS = 2.5V, ID=4.3A 40 @ VGS = 2.5V, ID=4.3A40 @ VGS = 2.5V, ID=4.3AFeatures 1 Advanced Trench Process Technology.

TSM2314CXwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC