SM2314NSA Specs and Replacement

Type Designator: SM2314NSA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 46 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOT23

SM2314NSA substitution

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SM2314NSA datasheet

 ..1. Size:257K  sino
 sm2314nsa.pdf pdf_icon

SM2314NSA

SM2314NSA N-Channel Enhancement Mode MOSFET Features Pin Description 20V/4.5A , D RDS(ON)=45m (max.) @ VGS=4.5V RDS(ON)=60m (max.) @ VGS=2.5V S RDS(ON)=85m (max.) @ VGS=1.8V G Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-3 (RoHS Compliant) D ESD Protection Applications G Power Management in Notebook Computer, Portable Equipment and Batt... See More ⇒

 8.1. Size:195K  taiwansemi
 tsm2314cx.pdf pdf_icon

SM2314NSA

TSM2314 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Drain 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 20 100 @ VGS = 1.8V 2.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderin... See More ⇒

 8.2. Size:311K  silicon standard
 ssm2314gn.pdf pdf_icon

SM2314NSA

SSM2314GN N-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS 20V D Simple drive requirement R 75m DS(ON) Fast switching ID 3.5A G Pb-free; RoHS compliant. S DESCRIPTION D The SSM2314GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. This device is S suitable for low-voltage applications such as DC... See More ⇒

 8.3. Size:3144K  cn sps
 sm2314.pdf pdf_icon

SM2314NSA

SM2314 N-Channel High Density Trench MOSFET (20V, 5.4A) Pb PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 30 @ VGS = 4.0V, ID=5.4A 30 @ VGS = 4.0V, ID=5.4A 30 @ VGS = 4.0V, ID=5.4A 30 @ VGS = 4.0V, ID=5.4A 20V 5.4A 40 @ VGS = 2.5V, ID=4.3A 40 @ VGS = 2.5V, ID=4.3A 40 @ VGS = 2.5V, ID=4.3A 40 @ VGS = 2.5V, ID=4.3A Features 1 Advanced Trench Process Technology. ... See More ⇒

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Detailed specifications: SM2300NSA, SM2300NSAN, SM2302NSA, SM2304NSA, SM2306NSA, SM2308NSA, SM2310NSA, SM2312NSA, AON7408, SM2316NSA, SM2318NSA, SM3024NSF, SM3024NSU, SM3054NSU, SM3106NSF, SM3106NSU, SM3113NSU

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs